Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification

• Authors: A. Fedotov , V. Skuratov , D. Yurasov , A. Novikov , I. Svito , P. Apel , A. Fedotov , P. Zukowski , V. Fedotova
• Languages of publication: EN

Abstracts

EN

In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.

Keywords

EN

72.20.My; 73.20.Fz; 73.40.-c; 61.80.Jh

Discipline

• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)
• 72.20.My: Galvanomagnetic and other magnetotransport effects
• 73.20.Fz: Weak or Anderson localization
• 73.40.-c: Electronic transport in interface structures

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 229-232

Dates

published

2017-08

Contributors

author

A. Fedotov

• Belarusian State University, Nezaleznasci av., 220030 Minsk, Belarus

author

V. Skuratov

• Joint Institute for Nuclear Research, Joliot-Curie 6, 141980, Dubna, Russia
• Dubna State University, Universitetskaya 19, 141982, Dubna, Russia
• National Research Nuclear University MEPhI, Kashirskoe hwy 31, 115409, Moscow, Russia

author

D. Yurasov

• Institute for Physics of Microstructures, Russian Academy of Sciences, Academic 7, 603950, Nizhny Novgorod, Russia
• Lobachevsky State University of Nizhny Novgorod, Gagarina av. 23, 603950, Nizhny Novgorod, Russia

author

A. Novikov

• Institute for Physics of Microstructures, Russian Academy of Sciences, Academic 7, 603950, Nizhny Novgorod, Russia
• Lobachevsky State University of Nizhny Novgorod, Gagarina av. 23, 603950, Nizhny Novgorod, Russia

author

I. Svito

• Belarusian State University, Nezaleznasci av., 220030 Minsk, Belarus

author

P. Apel

• Joint Institute for Nuclear Research, Joliot-Curie 6, 141980, Dubna, Russia
• Dubna State University, Universitetskaya 19, 141982, Dubna, Russia

author

A. Fedotov

• Belarusian State University, Nezaleznasci av., 220030 Minsk, Belarus

author

P. Zukowski

• Lublin University of Technology, Nadbystrzycka 38D, 20-618 Lublin, Poland

author

V. Fedotova

• Scientific-Practical Material Research Centre, National Academy of Sciences of Belarus, Brovki 19, 220072 Minsk, Belarus

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Identifiers

DOI

10.12693/APhysPolA.132.229