Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

• Authors: A. Kociubiński
• Languages of publication: EN

Abstracts

EN

Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles.

Keywords

EN

85.30.De; 85.30.Kk

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 85.30.Kk: Junction diodes

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 225-228

Dates

published

2017-08

Contributors

author

A. Kociubiński

• Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland

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Identifiers

DOI

10.12693/APhysPolA.132.225