PL EN


Preferences help
enabled [disable] Abstract
Number of results
2017 | 132 | 2 | 225-228
Article title

Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles.
Keywords
EN
Publisher

Year
Volume
132
Issue
2
Pages
225-228
Physical description
Dates
published
2017-08
Contributors
  • Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland
References
  • [1] S.E. Saddow, A. Agarwal, Advances in Silicon Carbide Processing and Applications, Artech House, 2004 http://artechhouse.com/International/Books/Advances-in-Silicon-Carbide-Processing-and-Applica-1014.aspx
  • [2] B.J. Baliga, Silicon Carbide Power Devices, World Sci, 2005 http://worldscientific.com/worldscibooks/10.1142/5986
  • [3] T. Kimoto, J.A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications, Wiley, 2014, doi: 10.1002/9781118313534.ch1
  • [4] M.V. Rao, Solid State Electron. 47, 213 (2003), doi: 10.1016/S0038-1101(02)00197-1
  • [5] E. Wendler, A. Heft, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 141, 105 (1998), doi: 10.1016/S0168-583X(98)00083-4
  • [6] M. Rambach, F. Schmid, M. Krieger, L. Frey, A.J. Bauer, G. Pensl, H. Ryssel, Nucl. Instrum. Methods Phys. Res. B 237, 68 (2005), doi: 10.1016/j.nimb.2005.04.079
  • [7] V.A. Gubanov, C.Y. Fong, Appl. Phys. Lett. 75, 88 (1999), doi: 10.1063/1.124285
  • [8] T. Bieniek, G. Janczyk, P. Janusz, J. Szynka, P. Grabiec, A. Kociubiński, M. Ekwińska, D. Tomaszewski, A. Malinowski, J. Telecommun. Inf. Technol. 1, 34 (2010) http://nit.eu/czasopisma/JTIT/2010/1/34.pdf
  • [9] D. Ortloff, T. Schmidt, K. Hahn, T. Bieniek, G. Janczyk, R. Brück, MEMS Product Engineering, Springer, Vienna 2014, doi: 10.1007/978-3-7091-0706-5
  • [10] A. Kociubiński, T. Bieniek, G. Janczyk, Acta. Phys. Pol. A 125, 1374 (2014)), doi: 10.12693/APhysPolA.125.1374)
  • [11] J. Romanek, D. Grambole, F. Herrmann, M. Voelskow, M. Posselt, W. Skorupa, J. Żuk, Nucl. Instrum. Methods Phys. Res. B 251, 148 (2006), doi: 10.1016/j.nimb.2006.06.005
  • [12] A. Heft, E. Wendler, T. Bachmann, E. Glaser, W. Wesch, Mater. Sci. Eng. B 29, 142 (1995), doi: 10.1016/0921-5107(94)04025-Y
  • [13] F. Pezzimenti, F.G. Della Corte, R. Nipoti, Microelectron. J. 39, 1594 (2008), doi: 10.1016/j.mejo.2008.02.005
  • [14] M. Rambach, A.J. Bauer, H. Ryssel, Phys. Status Solidi 245, 1315 (2008), doi: 10.1002/pssb.200743510
  • [15] J.F. Ziegler, M.D. Ziegler, J.P. Biersack, Nucl. Instrum. Methods Phys. Res. B 268, 1818 (2010), doi: 10.1016/j.nimb.2010.02.091
  • [16] F.G. Della Corte, F. Pezzimenti, R. Nipoti, Microelectron. J. 38, 1273(2007), doi: 10.1016/j.mejo.2007.09.024
  • [17] M. Turek, S. Prucnal, A. Drozdziel, K. Pyszniak, Nucl. Instrum. Methods Phys. Res. B 269, 700 (2011), doi: 10.1016/j.nimb.2011.01.133
  • [18] A. Kociubiński, M. Duk, D. Teklinska, N. Kwietniewski, M. Sochacki, M. Borecki, Proc. SPIE 9228, 922804 (2014), doi: 10.1117/12.2061287
  • [19] A. Kociubiński, M. Duk, M. Masłyk, N. Kwietniewski, M. Sochacki, M. Borecki, M. Korwin-Pawłowski, Proc. SPIE 8903, 89030V (2013), doi: 10.1117/12.2035436
  • [20] A. Kociubiński, M. Duk, M. Korona, K. Muzyka, Proc. SPIE 9662, 96620V (2015), doi: 10.1117/12.2205737
  • [21] A. Kociubiński, M. Borecki, M. Duk, M. Sochacki, M.L. Korwin-Pawlowski, Microelectron. Eng. 154, 48 (2016), doi: 10.1016/j.mee.2016.01.041
  • [22] A. Kociubinski, M. Duk, T. Bieniek, G. Janczyk, M. Borecki, in: Int. 3D Systems Integration Conf. (3DIC), Kinsdale, (Ireland), 2014, 15291809, doi: 10.1109/3DIC.2014.7152181
  • [23] M. Borecki, A. Kociubiński, M. Duk, N. Kwietniewski, M.L. Korwin-Pawlowski, P. Doroz, J. Szmidt, Proc. SPIE 8903, 89030H (2013), doi: 10.1117/12.2034797
  • [24] P. Prus, M. Borecki, M.L. Korwin-Pawlowski, A. Kociubiński, M. Duk, Proc. SPIE 9290, 929009 (2014), doi: 10.1117/12.2074463
  • [25] M. Borecki, M.L. Korwin-Pawlowski, M. Duk, A. Kociubiński, J. Frydrych, P. Prus, J. Szmidt,, Sensors Transduct. 193, 11 (2015) http://sensorsportal.com/HTML/DIGEST/P_2730.htm
  • [26] M. Borecki, P. Doroz, P. Prus, P. Pszczolkowski, J. Szmidt, M.L. Korwin-Pawlowski, J. Frydrych, A. Kociubinski, M. Duk, Int. J. Adv. Syst. Meas. 7, 57 (2014) http://thinkmind.org/index.php?view=article&articleid=sysmea_v7_n12_2014_6
  • [27] M. Borecki, P. Doroz, J. Szmidt, M.L. Korwin-Pawlowski, A. Kociubiński, M. Duk, in: SENSORDEVICES 2013, The Fourth Int. Conf. on Sensor Device Technologies and Applications, 2013, p. 19 http://thinkmind.org/index.php?view=article&articleid=sensordevices_2013_2_20_20068
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p06kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.