Effect of Rashba Spin-Orbit Coupling on the Spin Polarization of Holes in Two-Dimensional GaMnAs Magnetic Semiconductors

• Authors: S. Stagraczyński , V. Dugaev , J. Berakdar
• Languages of publication: EN

Abstracts

EN

We consider the effect of the Rashba spin-orbital coupling in two-dimensional GaAs semiconductor heavily doped with Mn, on the spin polarization of holes. Due to the strong internal spin-orbit interaction in GaAs, the spin of a hole is not a good quantum number but the hole in some energy state has a certain mean value of spin, which can be strongly affected by the Rashba spin-orbital interaction related to the substrate for 2D material.

Keywords

EN

Magnetization; Rashba spin-orbit coupling

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 1
• Pages: 189-192

Dates

published

2017-07

Contributors

author

S. Stagraczyński

• Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, 06120 Halle (Saale), Germany

author

V. Dugaev

• Department of Physics and Medical Engineering, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland

author

J. Berakdar

• Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, 06120 Halle (Saale), Germany

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Identifiers

DOI

10.12693/APhysPolA.132.189