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2017 | 132 | 1 | 189-192
Article title

Effect of Rashba Spin-Orbit Coupling on the Spin Polarization of Holes in Two-Dimensional GaMnAs Magnetic Semiconductors

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EN
Abstracts
EN
We consider the effect of the Rashba spin-orbital coupling in two-dimensional GaAs semiconductor heavily doped with Mn, on the spin polarization of holes. Due to the strong internal spin-orbit interaction in GaAs, the spin of a hole is not a good quantum number but the hole in some energy state has a certain mean value of spin, which can be strongly affected by the Rashba spin-orbital interaction related to the substrate for 2D material.
Publisher

Year
Volume
132
Issue
1
Pages
189-192
Physical description
Dates
published
2017-07
Contributors
  • Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, 06120 Halle (Saale), Germany
author
  • Department of Physics and Medical Engineering, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
author
  • Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, 06120 Halle (Saale), Germany
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n1p52kz
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