Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2017 | 131 | 6 | 1544-1549

Article title

Synthesis, Characterization and Magnetotransport Behavior of La-Based Double Layered Manganites

Authors

Content

Title variants

Languages of publication

EN

Abstracts

EN
The single phase double layered manganites La_{1.2}Sr_{1.8-x}Ca_xMn₂O₇ (x=0.0, 0.3) were synthesized by the sol-gel method. The electrical resistivity at various magnetic fields over a temperature range 4.2-300 K was measured. The insulator-to-metal transition temperature (T_{IM}) decreases from 123 K (x=0.0) to 70 K (x=0.3). The spin-glass (SG)-like transition is observed in both the samples at 30 K (T_{SG} - SG-like transition temperature). The transport behavior is analyzed in the entire temperature range (4.2-300 K) in three different regions: paramagnetic insulating region (T>T_{IM}), ferromagnetic metallic region (T_{SG}T_{IM} in the two samples. At T_{SG}

Year

Volume

131

Issue

6

Pages

1544-1549

Physical description

Dates

published
2017-06
received
2016-12-04
(unknown)
2017-05-15
(unknown)
2017-05-18

Contributors

author
  • Department of Physics, Chaitanya Bharathi Institute of Technology (A), Hyderabad 500 075, Telangana State, India

References

  • [1] Y. Moritomo, A. Asamitsu, H. Kuwahara, Y. Tokura, Nature (London) 380, 141 (1996), doi: 10.1038/380141a0
  • [2] T. Kimura, Y. Tomioka, H. Kuwahara, A. Asamitsu, M. Tamura, Y. Tokura, Science 274, 1698 (1996), doi: 10.1126/science.274.5293.1698
  • [3] T. Kimura, A. Asamitsu, Y. Tomioka, Y. Tokura, Phys. Rev. Lett. 79, 3720 (1997), doi: 10.1103/PhysRevLett.79.3720
  • [4] D.N. Argyriou, J.F. Mitchell, J.B. Goodenough, O. Chmaissem, S. Short, J.D. Jorgensen, Phys. Rev. Lett. 78, 1568 (1997), doi: 10.1103/PhysRevLett.78.1568
  • [5] J.F. Mitchell, C.D. Ling, J.E. Millburn, D.N. Argyriou, A. Berger, M. Medarde, J. Appl. Phys. 89, 6618 (2001), doi: 10.1063/1.1357135
  • [6] S.N. Ruddlesden, P. Popper, Acta Crystallogr. 11, 54 (1958), doi: 10.1107/S0365110X58000128
  • [7] Hong Zhu, Xianming Liu, Keqing Ruan, Yuheng Zhang, Phys. Rev. B 65, 104424 (2002), doi: 10.1103/PhysRevB.65.104424
  • [8] S. Okamoto, S. Ishihara, S. Maekawa, Phys. Rev. B 63, 104401 (2001), doi: 10.1103/PhysRevB.63.104401
  • [9] C.L. Zhang, X.J. Chen, C.C. Almasan, J.S. Gardner, J.L. Sarrao, Phys. Rev. B 65, 134439 (2002), doi: 10.1103/PhysRevB.65.134439
  • [10] S. Chatterjee, P.H. Chou, C.F. Chang, I.P. Hong, H.D. Yang, Phys. Rev. B 61, 6106 (2000), doi: 10.1103/PhysRevB.61.6106
  • [11] H. Zhu, D. Zhu, Y. Zhang, J. Appl. Phys. 92, 7355 (2002), doi: 10.1063/1.1521254
  • [12] A. Szytula, Acta Phys. Pol. A 118, 303 (2010), doi: 10.12693/APhysPolA.118.303
  • [13] M. Matsukawa, M. Chiba, E. Kikuchi, R. Suryanarayanan, M. Apostu, S. Nimori, K. Sugimoto, N. Kobayashi, Phys. Rev. B 72, 224422 (2005), doi: 10.1103/PhysRevB.72.224422
  • [14] Hong Zhu, Xiaojun Xu, Li Pi, Yuheng Zhang, Phys. Rev. B 62, 6754 (2000), doi: 10.1103/PhysRevB.62.6754
  • [15] Sunil Nair, A. Banerjee, Phys. Rev. B 70, 104428 (2004), doi: 10.1103/PhysRevB.70.104428
  • [16] Y.S. Reddy, V. Prashanth Kumar, R. Rawat, A. Banerjee, P. Kistaiah, C. Vishnuvardhan Reddy, Phys. Status Solidi B 244, 3719 (2007), doi: 10.1002/pssb.200743099
  • [17] R. Ang, W.J. Lu, R.L. Zhang, B.C. Zhao, X.B. Zhu, W.H. Song, Y.P. Sun, Phys. Rev. B 72, 184417 (2005), doi: 10.1103/PhysRevB.72.184417
  • [18] X.J. Chen, C.L. Zhang, C.C. Almasan, J.S. Gardner, J.L. Sarrao, Phys. Rev. B 67, 094426 (2003), doi: 10.1103/PhysRevB.67.094426
  • [19] R. Thiyagarajan, N. Manivannan, S. Arumugam, S. Esakki Muthu, N.R. Tamilselvan, C. Sekar, H. Yoshino, K. Murata, M.O. Apostu, R. Suryanarayanan, A. Revcolevschi, J. Phys. Condens. Matter 24, 136002 (2012), doi: 10.1088/0953-8984/24/13/136002
  • [20] X.J. Chen, C.L. Zhang, J.S. Gardner, J.L. Sarrao, C.C. Almasan, Phys. Rev. B 68, 064405 (2003), doi: 10.1103/PhysRevB.68.064405
  • [21] Y.S. Reddy, V. Prashanth Kumar, S. Ramesh, S. Venkanna, M.V. Ramana Reddy, P. Kistaiah, C. Vishnuvardhan Reddy, Acta Phys. Pol. A 113, 677 (2007), doi: 10.12693/APhysPolA.113.1687
  • [22] M. Viret, L. Ranno, J.M.D. Coey, Phys. Rev. B 55, 8067 (1997), doi: 10.1103/PhysRevB.55.8067
  • [23] S.B. Ogale, V. Talyansky, C.H. Chen, R. Ramesh, R.L. Green, T. Venkatesan, Phys. Rev. Lett. 77, 1159 (1996), doi: 10.1103/PhysRevLett.77.1159
  • [24] G. Jeffrey Snyder, R. Hiskes, S. Dicarolis, M.R. Beasley, T.H. Geballe, Phys. Rev. B 53, 14434 (1996), doi: 10.1103/PhysRevB.53.14444
  • [25] M. Jaime, H.T. Hardner, M.B. Salamon, M. Rubinstein, P. Dorsey, D. Emin, Phys. Rev. Lett. 78, 951 (1997), doi: 10.1103/PhysRevLett.78.951
  • [26] M. Viret, L. Ranno, J.M.D. Coey, J. Appl. Phys. 81, 4964 (1997), doi: 10.1063/1.365013
  • [27] Yu Wang, J.J. Santiago-Aviles, Appl. Phys. Lett. 89, 123119 (2006), doi: 10.1063/1.2338573
  • [28] D.S. Rana, C.M. Thaker, K.R. Mavani, D.G. Kuberkar, D.C. Kundaliya, S.K. Malik, J. Appl. Phys. 95, 4934 (2004), doi: 10.1063/1.1667258
  • [29] A. Banerjee, S. Pal, B.K. Chaudhuria, J. Chem. Phys. 115, 1550 (2001), doi: 10.1063/1.1378018
  • [30] M.H. Ehsani, P. Kameli, M.E. Ghazi, J. Phys. Chem. Solids 73, 744 (2012), doi: 10.1016/j.jpcs.2012.01.020
  • [31] P. Schiffer, A.P. Ramirez, W. Bao, S.-W. Cheong, Phys. Rev. Lett. 75, 3336 (1995), doi: 10.1103/PhysRevLett.75.3336
  • [32] M. Ziese, Rep. Prog. Phys. 65, 143 (2002), doi: 10.1088/0034-4885/65/2/202
  • [33] Q. Huang, Z.W. Li, J. Li, C.K. Ong, J. Phys. Condens. Matter 13, 4033 (2001), doi: 10.1088/0953-8984/13/18/312
  • [34] A. Urushibara, Y. Moritomo, T. Amira, A. Asamitsu, G. Kido, Y. Tokura, Phys. Rev. B 51, 14103 (1995), doi: 10.1103/PhysRevB.51.14103
  • [35] Li Pi, Lei Zheng, Yuheng Zhang, Phys. Rev. B 61, 8917 (2000), doi: 10.1103/PhysRevB.61.8917
  • [36] R.L. Zhang, W.H. Song, Y.Q. Ma, J. Yang, B.C. Zhao, Z.G. Sheng, J.M. Dai, Y.P. Sun, Phys. Rev. B 70, 224418 (2004), doi: 10.1103/PhysRevB.70.224418
  • [37] T. Okuda, T. Kimura, Y. Tokura, Phys. Rev. B 60, 3370 (1999), doi: 10.1103/PhysRevB.60.3370
  • [38] I. Shklovskii, A.L. Efros, in: Electronic Properties of Doped Semiconductors, Springer- Verlag, Berlin 1984

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv131n623kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.