PL EN


Preferences help
enabled [disable] Abstract
Number of results
2017 | 131 | 5 | 1250-1253
Article title

Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors

Content
Title variants
Languages of publication
EN
Abstracts
EN
The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.
Keywords
Contributors
author
  • Industrial Research Institute for Automation and Measurements, Al. Jerozolimskie 202, 02-486 Warsaw, Poland
author
  • Industrial Research Institute for Automation and Measurements, Al. Jerozolimskie 202, 02-486 Warsaw, Poland
author
  • Institute of Metrology and Biomedical Engineering, Warsaw University of Technology, sw. A. Boboli 8, 02-525 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
  • Institute of Metrology and Biomedical Engineering, Warsaw University of Technology, sw. A. Boboli 8, 02-525 Warsaw, Poland
author
  • Institute of Metrology and Biomedical Engineering, Warsaw University of Technology, sw. A. Boboli 8, 02-525 Warsaw, Poland
References
  • [1] P. Ripka, Magnetic Sensors and Magnetometers, Artech House, Boston 2001, doi: 10.1088/0957-0233/13/4/707
  • [2] E. Ramsden, Hall-Effect Sensors: Theory and Application, Newnes, Boston 2006
  • [3] Global Magnetic Field Sensors Market by Product, Technology and Applications, 2011 http://marketsandmarkets.com
  • [4] M. Nowicki, R. Szewczyk, Materials 6, 5593 (2013), doi: 10.3390/ma6125593
  • [5] W. Strupinski, K. Grodecki, A. Wysmolek, R. Stepniewski, T. Szkopek, P.E. Gaskell, A. Grüneis, D. Haberer, R. Bozek, J. Krupka, J.M. Baranowski, Nano Lett. 11, 1786 (2011), doi: 10.1021/nl200390e
  • [6] N. Ray, S. Shallcross, S. Hensel, O. Pankratov, Phys. Rev. B 86, 125426 (2012), doi: 10.1103/PhysRevB.86.125426
  • [7] C. Riedl, U. Starke, J. Bernhardt, M. Franke, K. Heinz, Phys. Rev. B 76, 245406 (2007), doi: 10.1103/PhysRevB.76.245406
  • [8] K.V. Emtsev, F. Speck, Th. Seyller, L. Ley, J.D. Riley, Phys. Rev. B 77, 155303 (2008), doi: 10.1103/PhysRevB.77.155303
  • [9] C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, U. Starke, Phys. Rev. Lett. 103, 246804 (2009), doi: 10.1103/PhysRevLett.103.246804
  • [10] R.S. Popovic, Hall Effect Devices, Institute of Physics Publ., London 2004
  • [11] N.W. Ashcroft, N.D. Mermin, Solid State Physics, Holt, Rinehart and Winston, New York 1976, doi: 10.1002/piuz.19780090109
  • [12] V. Panchal, K. Cedergren, R. Yakimova, A. Tzalenchuk, S. Kubatkin, O. Kazakova, J. Appl. Phys. 111, 07E509 (2012), doi: 10.1063/1.3677769
  • [13] H. Xu, Z. Zhang, R. Shi, H. Liu, Z. Wang, S. Wang, L.M. Peng, Sci. Rep. 3, 1207 (2013), doi: 10.1038/srep01207
  • [14] Z. Ni, Y. Wang, T. Yu, Z. Shen, Nano Res. 1, 273 (2008), doi: 10.1007/s12274-008-8036-1
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv131n513kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.