Influence of Pressure on the Electron-Phonon Interaction in Superconductors

• Authors: Mat. Orendáč , S. Gabáni , G. Pristáš , E. Gažo , N. Shitsevalova , K. Flachbart
• Languages of publication: EN

Abstracts

EN

The electron-phonon interaction is a very important and ubiquitous process in solids, affecting almost all their physical properties. In metals, where the relaxation processes depend on both electrons and phonons, all thermodynamic and transport properties are dictated by the electron-phonon interaction. A very strong manifestation of the electron-phonon interaction is related with the superconducting state. Here we report the effect of high pressure on the transport electron-phonon interaction, λ_{tr}, in superconducting systems such as YB_6 (T_c ≈ 7.5 K), Pb (T_c ≈7.2 K), Nb bulk or thin film (T_c ≈9.2 K), and in LaB_6 in which superconductivity was not yet observed. The expected pressure effect should correspond to the theoretically predicted negative pressure effect on T_c (except for Nb thin film and LaB_6). To determine the influence of pressure on λ_{tr}, we utilized the Bloch-Grüneisen fit (denoted also as "thermal spectroscopy") of the precise temperature dependence of resistivity measurements in the normal state up to a pressure of 2.8 GPa. Based on this fit the observed negative pressure effect on λ_{tr} values, dλ_{tr}/dp, are as follows: dλ_{tr}/dp ≈-0.045 GPa^{-1} for YB_6, dλ_{tr}/dp ≈-0.13 GPa^{-1} for Pb, dλ_{tr}/dp ≈-0.019 GPa^{-1} or -0.028 GPa^{-1} for Nb bulk or thin film, respectively, and dλ_{tr}/dp ≈-0.003 GPa^{-1} for LaB_6.

Keywords

EN

74.70.Ad; 72.15.Eb; 74.62.Fj; 74.25.F-; 63.20.kd

Discipline

• 63.20.kd: Phonon-electron interactions
• 74.62.Fj: Effects of pressure
• 74.25.F-: Transport properties
• 72.15.Eb: Electrical and thermal conduction in crystalline metals and alloys
• 74.70.Ad: Metals; alloys and binary compounds (including A15, MgB2, etc.)

• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 131
• Issue: 4
• Pages: 1039-1041

Dates

published

2017-04

Contributors

author

Mat. Orendáč

• Institute of Experimental Physics, SAS, Watsonova 47, 040 01 Košice, Slovakia
• Institute of Physics, Faculty of Sciences, P.J. Safarik University, Park Angelinum 9, 040 01 Košice, Slovakia

author

S. Gabáni

• Institute of Experimental Physics, SAS, Watsonova 47, 040 01 Košice, Slovakia

author

G. Pristáš

• Institute of Experimental Physics, SAS, Watsonova 47, 040 01 Košice, Slovakia

author

E. Gažo

• Institute of Experimental Physics, SAS, Watsonova 47, 040 01 Košice, Slovakia

author

N. Shitsevalova

• Institute for Problems of Materials Science, NASU, Krzyzhanovsky 3, 036 80 Kiev, Ukraine

author

K. Flachbart

• Institute of Experimental Physics, SAS, Watsonova 47, 040 01 Košice, Slovakia

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Identifiers

DOI

10.12693/APhysPolA.131.1039