Anisotropy of Magnetoresistance in HoB₁₂

• Authors: A. Khoroshilov , V. Krasnorussky , A. Bogach , V. Glushkov , S. Demishev , A. Levchenko , N. Shitsevalova , V. Filipov , S. Gabáni , K. Flachbart , M. Anisimov , K. Siemensmeyer , N. Sluchanko
• Languages of publication: EN

Abstracts

EN

We present results of precision measurements of magnetoresistance of isotopically pure Ho¹¹B₁₂ at low temperatures 2÷10 K in magnetic field up to 80 kOe of different orientation to the crystal axes. The data obtained revealed strong anisotropy of magnetoresistance and allowed us to reconstruct magnetic H-T phase diagrams for main crystallographic directions H || [001], [110], and [111]. Analysis of magnetoresistance derivatives allowed to conclude in favor of two main magnetoresistance contributions. Among of them the negative quadratic component is attributed to charge carriers scattering on a magnetic clusters of Ho³⁺ ions (4f component) and positive linear one may be explained in terms of scattering on a spin density waves (5d component).

Keywords

EN

71.27.+a

Discipline

• 71.27.+a: Strongly correlated electron systems; heavy fermions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 131
• Issue: 4
• Pages: 976-978

Dates

published

2017-04

Contributors

author

A. Khoroshilov

• Moscow Institute of Physics and Technology, Moscow Region, 141700 Russia
• Prokhorov General Physics Institute RAS, 119991 Moscow, Russia

author

V. Krasnorussky

• Prokhorov General Physics Institute RAS, 119991 Moscow, Russia

author

A. Bogach

• Prokhorov General Physics Institute RAS, 119991 Moscow, Russia

author

V. Glushkov

• Moscow Institute of Physics and Technology, Moscow Region, 141700 Russia
• Prokhorov General Physics Institute RAS, 119991 Moscow, Russia

author

S. Demishev

• Moscow Institute of Physics and Technology, Moscow Region, 141700 Russia
• Prokhorov General Physics Institute RAS, 119991 Moscow, Russia

author

A. Levchenko

• Institute for Problems of Materials Science, NASU, 03680 Kiev, Ukraine

author

N. Shitsevalova

• Institute for Problems of Materials Science, NASU, 03680 Kiev, Ukraine

author

V. Filipov

• Institute for Problems of Materials Science, NASU, 03680 Kiev, Ukraine

author

S. Gabáni

• Institute of Experimental Physics, SAS, Watsonova 47, 040 01 Košice, Slovakia

author

K. Flachbart

• Institute of Experimental Physics, SAS, Watsonova 47, 040 01 Košice, Slovakia

author

M. Anisimov

• Moscow Institute of Physics and Technology, Moscow Region, 141700 Russia

author

K. Siemensmeyer

• Hahn Meitner Institut Berlin, D 14109 Berlin, Germany

author

N. Sluchanko

• Moscow Institute of Physics and Technology, Moscow Region, 141700 Russia
• Prokhorov General Physics Institute RAS, 119991 Moscow, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.131.976