Anisotropy of the Charge Transport in GdB₆

• Authors: M. Anisimov , V. Glushkov , A. Bogach , S. Demishev , N. Samarin , A. Samarin , N. Shitsevalova , A. Levchenko , V. Filipov , S. Gábani , K. Flachbart , N. Sluchanko
• Languages of publication: EN

Abstracts

EN

The anisotropy of charge transport was investigated in the antiferromagnetic II state of GdB₆ from precise measurements of transverse magnetoresistance. Based on the data obtained we detected a complicated behavior of magnetoresistance curves which are characterized by the appearance of considerable hysteresis on the field and angular dependences below T_{N2}. Moreover it was shown that the system GdB₆ is sensitive to cooling-warming prehistory. The data analysis allowed to reconstruct magnetic H-T phase diagram of GdB₆ along main crystallographic directions (H||⟨001⟩,⟨110⟩,⟨111⟩) and to propose additional phase transition inside AF II phase at H₁ ≈ 0.5 T.

Keywords

EN

72.15.Gd

Discipline

• 72.15.Gd: Galvanomagnetic and other magnetotransport effects(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 131
• Issue: 4
• Pages: 973-975

Dates

published

2017-04

Contributors

author

M. Anisimov

• Prokhorov General Physics Institute of RAS, Vavilov 38, 119991 Moscow, Russia

author

V. Glushkov

• Prokhorov General Physics Institute of RAS, Vavilov 38, 119991 Moscow, Russia
• Moscow Institute of Physics and Technology, Institutsky lane 9, 141700 Dolgoprudny, Russia

author

A. Bogach

• Moscow Institute of Physics and Technology, Institutsky lane 9, 141700 Dolgoprudny, Russia

author

S. Demishev

• Prokhorov General Physics Institute of RAS, Vavilov 38, 119991 Moscow, Russia
• Moscow Institute of Physics and Technology, Institutsky lane 9, 141700 Dolgoprudny, Russia

author

N. Samarin

• Prokhorov General Physics Institute of RAS, Vavilov 38, 119991 Moscow, Russia

author

A. Samarin

• Moscow Institute of Physics and Technology, Institutsky lane 9, 141700 Dolgoprudny, Russia

author

N. Shitsevalova

• Frantsevich Institute for Problems of Materials Science NAS, Krzhyzhanovskii 3, 03680 Kiev, Ukraine

author

A. Levchenko

• Frantsevich Institute for Problems of Materials Science NAS, Krzhyzhanovskii 3, 03680 Kiev, Ukraine

author

V. Filipov

• Frantsevich Institute for Problems of Materials Science NAS, Krzhyzhanovskii 3, 03680 Kiev, Ukraine

author

S. Gábani

• Institute of Experimental Physics of SAS, Watsonova 47, SK-04001 Košice, Slovak Republic

author

K. Flachbart

• Institute of Experimental Physics of SAS, Watsonova 47, SK-04001 Košice, Slovak Republic

author

N. Sluchanko

• Prokhorov General Physics Institute of RAS, Vavilov 38, 119991 Moscow, Russia
• Moscow Institute of Physics and Technology, Institutsky lane 9, 141700 Dolgoprudny, Russia

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Identifiers

DOI

10.12693/APhysPolA.131.973