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2016 | 130 | 6 | 1385-1388
Article title

(Ga,Mn)As-Based Magnetic Tunnel Junctions under Electric Field from First Principles

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EN
Abstracts
EN
Diluted magnetic semiconductors composed in magnetic tunnel junctions have potential applications in spintronics but the development has not been fast. The main difficulty is how to control the magnetism of diluted magnetic semiconductors. For our model semiconductor magnetic tunnel junctions, (Ga,Mn)As/GaAs/(Ga,Mn)As, we found that the magnetic coupling between the transition metal ions in each diluted magnetic semiconductor electrode of such semiconductor magnetic tunnel junctions can be switched from ferromagnetic to antiferromagnetic by the external electric field. The phenomenon suggest a possible avenue for the application of semiconductor magnetic tunnel junctions.
Keywords
EN
Publisher

Year
Volume
130
Issue
6
Pages
1385-1388
Physical description
Dates
published
2016-12
received
2016-04-12
(unknown)
2016-11-15
Contributors
author
  • Department of Electronic Engineering, Shanghai JianQiao University, Shanghai 201306, People's Republic of China
author
  • Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, People’s Republic of China
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv130n619kz
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