Structural, Morphological and Optical Study of Bismuth and Zinc Co-Doped Yttrium Oxide Prepared by Solvothermal and Wet Chemical Method

• Authors: G. Bhavani , S. Ganesan
• Languages of publication: EN

Abstracts

EN

Yttrium oxide (Y₂O₃) is the most familiar yttrium compound, which is popularly known as host for ion doping of other rare earth elements. Bismuth ion (Bi³⁺) is well known as an activator and sensitizer in several particular phosphors. Zinc oxide (ZnO) nanomaterial, having a wide band gap, is one of the promising candidates for general illumination applications due to its high optical transparency and color tenability bismuth (Bi) and zinc (Zn) co-doped Y₂O₃ samples are synthesized by simple precipitation techniques like solvothermal and wet chemical methods. The prepared samples were characterized using X-ray diffraction, scanning electron microscope, energy dispersive X-ray spectra, ultraviolet-visible absorbance spectroscopy and photoluminescence spectrophotometry. Ultraviolet-visible absorption studies showed absorption only around 340 nm whereas photoluminescence shows peaks around 500 nm, 680 nm, and 1020 nm for Bi and Zn co-doped Y₂O₃. The photoluminescence spectrum shows emission in blue region (500 nm) due to Zn dopant and red and near infrared region (680 and 1020 nm) due to Bi dopant. This is a new material which can effectively work as an efficient and cheap red phosphor.

Keywords

EN

78.55.-m; 61.05.C-; 61.72.sd

Discipline

• 61.72.sd: Impurity concentration
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 61.05.C-: X-ray diffraction and scattering(for x-ray diffractometers, see 07.85.Jy; for x-ray studies of crystal defects, see 61.72.Dd, Ff)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 6
• Pages: 1373-1379

Dates

published

2016-12

received

2015-02-17

(unknown)

2016-10-10

(unknown)

2016-11-01

Contributors

author

G. Bhavani

• Department of Physics, Jansons Institute of Technology, Coimbatore, Tamilnadu, India

author

S. Ganesan

• Sri Shakthi Institute of Engineering and Technology, Coimbatore, Tamilnadu, India

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Identifiers

DOI

10.12693/APhysPolA.130.1373