Efficient Emission from InAlGaAs Single Quantum Dots with Low Lattice Misfit and AlGaAs Indirect Bandgap Barrier

• Authors: T. Słupiński , K. Korona , J. Papierska , J. Borysiuk
• Languages of publication: EN

Abstracts

EN

We report on molecular beam epitaxy growth and properties of rarely studied quaternary In_{0.4}(Al_{0.75}Ga_{0.25})_{0.6}As self-assembled quantum dots, which show strong and efficient emission of red light from single quantum dots. The increased yield is, among others, due to efficient energy transfer from indirect band-gap Al_{0.75}Ga_{0.25}As barriers. To maximize photon energy emitted from quantum dots, low In composition, x_{In} = 0.4 was applied, which also lowered the lattice misfit close to the limit of 2D/3D transition in the Stranski-Krastanov growth mode. Time-resolved micro-photoluminescence shows emission at 650-750 nm. Well-resolved single quantum dot photoluminescence lines (decay time of ≈ 1-2 ns) are observed despite a high concentration ≈ 3×10¹¹ cm¯² of quantum dots. We discuss this observation assuming newly a role of carriers or excitons diffusion/tunneling between quantum dots at high surface concentration of dots and a possible role of lattice disorder inside the dot on the exciton lifetime.

Keywords

EN

78.55.Cr; 73.22.-f; 78.47.jd

Discipline

• 78.55.Cr: III-V semiconductors
• 78.47.jd: Time resolved luminescence
• 73.22.-f: Electronic structure of nanoscale materials and related systems

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 5
• Pages: 1229-1232

Dates

published

2016-11

Contributors

author

T. Słupiński

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

K. Korona

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

J. Papierska

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

J. Borysiuk

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

References

• [1] Single Quantum Dots, Fundamentals, Applications and New Concepts, Ed. P. Michler, Topics in Applied Physics, Vol. 90, Springer, Berlin 2003, doi: 10.1007/b13751
• [2] Quantum Dots: Fundamentals, Applications, and Frontiers, Eds. B.A. Joyce, P.C. Kelires, A.G. Naumovets, D.D. Vvedensky, NATO Science Series, Mathematics, Physics and Chemistry, Vol. 190, Springer, The Netherlands 2005, doi: 10.1007/1-4020-3315-X
• [3] V. Shchukin, E. Schöll, P. Kratzer, in: Semiconductor Nanostructures, Ed. D. Bimberg, Springer, Berlin 2008, doi: 10.1007/978-3-540-77899-8
• [4] T.W. Schlereth, C. Schneider, S. Höfling, A. Forchel, Nanotechnology 19, 045601 (2008), doi: 10.1088/0957-4484/19/04/045601
• [5] Ł. Dusanowski, A. Golnik, M. Syperek, M. Nawrocki, G. Sek, J. Misiewicz, T.W. Schlereth, C. Schneider, S. Höfling, M. Kamp, A. Forchel, Appl. Phys. Lett. 101, 103108 (2012), doi: 10.1063/1.4750241
• [6] D. Valente, J. Suffczyński, T. Jakubczyk, A. Dousse, A. Lemaître, I. Sagnes, L. Lanco, P. Voisin, A. Auffeves, P. Senellart, Phys. Rev. B 89, 041302(R) (2014), doi: 10.1103/PhysRevB.89.041302
• [7] Ch. Hayn, Phys. Rev. B 64, 165306 (2001), doi: 10.1103/PhysRevB.64.165306
• [8] V.G. Dubrovskii, G.E. Cirlin, V.M. Ustinov, Phys. Rev. B 68, 075409 (2003), doi: 10.1103/PhysRevB.68.075409
• [9] P. Politi, G. Grenet, A. Marty, A. Ponchet, J. Villain, Phys. Rep. 324, 271 (2000), doi: 10.1016/S0370-1573(99)00046-0
• [10] I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001), doi: 10.1063/1.1368156
• [11] K.P. Korona, P. Wojnar, J.A. Gaj, G. Karczewski, J. Kossut, J. Kuhl, Solid State Commun. 133, 369 (2005), doi: 10.1016/j.ssc.2004.11.032
• [12] L. Besombes, K. Kheng, L. Marsal, H. Mariette, Phys. Rev. B 63, 155307 (2001), doi: 10.1103/PhysRevB.63.155307
• [13] S. Rudin, T.L. Reinecke, M. Bayer, Phys. Rev. B 74, 161305 (2006), doi: 10.1103/PhysRevB.74.161305
• [14] A. Babiński, J. Borysiuk, S. Kret, M. Czyż, A. Golnik, S. Raymond, Z.R. Wasilewski, Appl. Phys. Lett. 92, 171104 (2008), doi: 10.1063/1.2918836

Identifiers

DOI

10.12693/APhysPolA.130.1229