Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure

• Authors: S. Lee , J. Kim , S. Yoon , Y. Kim , S. Lee , C. Honsberg
• Languages of publication: EN

Abstracts

EN

The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap (E_{g}) of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.

Keywords

EN

78.66.Fd; 78.40.-q; 73.40.Lq; 73.50.Pz

Discipline

• 78.66.Fd: III-V semiconductors
• 73.50.Pz: Photoconduction and photovoltaic effects
• 78.40.-q: Absorption and reflection spectra: visible and ultraviolet(for infrared spectra, see 78.30.-j; for optical spectra of superconductors, see 74.25.nd; for time resolved reflection spectroscopy, see 78.47.jg; for multiphoton absorption, see 79.20.Ws in impact phenomena)
• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 5
• Pages: 1213-1216

Dates

published

2016-11

Contributors

author

S. Lee

• Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea

author

J. Kim

• Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea

author

S. Yoon

• Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea

author

Y. Kim

• Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea

author

S. Lee

• Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea

author

C. Honsberg

• School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

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Identifiers

DOI

10.12693/APhysPolA.130.1213