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Abstracts
Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.
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Volume
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Pages
1196-1198
Physical description
Dates
published
2016-11
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
author
- Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University, Linz, Austria
author
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
author
- Institute of Electron Technology, Warszawa, Poland
author
- Institute of Electron Technology, Warszawa, Poland
author
- Institute of Electron Technology, Warszawa, Poland
author
- Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University, Linz, Austria
author
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Warszawa, Poland
- WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
author
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv130n510kz