Transport Characteristics of Gated Core-Multishell Nanowires: Self-Consistent Approach

• Authors: T. Palutkiewicz , M. Wołoszyn , P. Wójcik , B. Spisak
• Languages of publication: EN

Abstracts

EN

The influence of the applied gate voltage on the coherent propagation of the conduction electrons through the InGaAs/InP core-multishell nanowires with the surrounding gate is considered. The solution of the three-dimensional Schrödinger equation within the effective mass approximation is found using the adiabatic method. The electrostatic potential distribution generated by the all-around gate is determined from the self-consistent procedure applied to the Schrödinger-Poisson problem. The Landauer-Büttiker formalism and quantum transmission boundary method are applied to calculate the transport properties of the considered nanosystem.

Keywords

EN

72.80.Ey; 73.63.Nm; 85.35.-p

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 85.35.-p: Nanoelectronic devices
• 73.63.Nm: Quantum wires

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 5
• Pages: 1190-1192

Dates

published

2016-11

Contributors

author

T. Palutkiewicz

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, 30-059 Kraków, Poland

author

M. Wołoszyn

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, 30-059 Kraków, Poland

author

P. Wójcik

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, 30-059 Kraków, Poland

author

B. Spisak

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, 30-059 Kraków, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.130.1190