Light Induced Modification of Graphene Oxide Layers on GaN Basis

• Authors: A. Łopion , L. Stobiński , K. Pakuła , R. Bożek , P. Kaźmierczak , A. Wysmołek , R. Stępniewski
• Languages of publication: EN

Abstracts

EN

Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.

Keywords

EN

73.22.-f   78.55.-m   78.30.-j   07.05.Kf  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 5
• Pages: 1169-1171

Dates

published

2016-11

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Identifiers

DOI

10.12693/APhysPolA.130.1169