Calculations of RHEED and RHEPD Rocking Curves for Growing Surfaces of Germanium

• Authors: Z. Mitura
• Languages of publication: EN

Abstracts

EN

Reflection high energy electron diffraction is a popular technique to characterize arrangements of atoms near a surface. However, Japanese researchers recently demonstrated experiments in the same geometry, however, conducted using positrons. In this context, detailed comparisons of basic results expected for diffractions of electrons and positrons seem to be interesting. Subsequently, in the current work the growth of single atomic layers of Ge on the Ge(001) substrate is assumed and intensities of reflected beams for electrons and positrons are computed by using dynamical diffraction theory for the case of the off-symmetry azimuth. Shapes of respective theoretical rocking curves are analyzed and then the features of intensity oscillations expected during the regular, continuous deposition of the material are discussed.

Keywords

EN

61.05.J-; 68.35.B-; 81.05.Cy

Discipline

• 68.35.B-: Structure of clean surfaces (and surface reconstruction)
• 81.05.Cy: Elemental semiconductors(for semiconductors in electrochemistry, see 82.45.Vp)
• 61.05.J-: Electron diffraction and scattering(for electron diffractometers, see 07.78.+s)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 4
• Pages: 1134-1136

Dates

published

2016-10

Contributors

author

Z. Mitura

• AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Sci., al. A. Mickiewicza 30, 30-059 Kraków, Poland

References

• [1] A. Ichimiya, P.I. Cohen, Reflection High Energy Electron Diffraction, Cambridge University Press, Cambridge 2004, doi: 10.1017/CBO9780511735097
• [2] J. Huang, C.Y. Cai, C.L. Lv, G.W. Zhou, Y.G. Wang, Philos. Mag. 95, 4095 (2015), doi: 10.1080/14786435.2015.1113323
• [3] Y. Fukaya, M. Maekawa, I. Mochizuki, K. Wada, T. Hyodo, A. Kawasuso, J. Phys. Conf. Ser. 443, 012068 (2013), doi: 10.1088/1742-6596/443/1/012068
• [4] A. Kawasuso, S. Okada, Phys. Rev. Lett. 81, 2695 (1998), doi: 10.1103/PhysRevLett.81.2695
• [5] A. Ichimiya, Solid State Phenom. 28-29, 143 (1992), doi: 10.4028/www.scientific.net/SSP.28-29.143
• [6] Y. Fukaya, M. Maekawa, A. Kawasuso, I. Mochizuki, K. Wada, T. Shidara, A. Ichimiya, T. Hyodo, Appl. Phys. Expr. 7, 056601 (2014), doi: 10.7567/APEX.7.056601
• [7] Z. Mitura, Acta Crystallogr. A 71, 513 (2015), doi: 10.1107/S2053273315010608
• [8] Z. Mitura, S.L. Dudarev, M.J. Whelan, J. Cryst. Growth 198-199, 905 (1999), doi: 10.1016/S0022-0248(98)01040-9
• [9] M.C. Sullivan, M.J. Ward, A. Gutiérrez-Llorente, E.R. Adler, H. Joress, A. Woll, J.D. Brock, Appl. Phys. Lett. 106, 031604 (2015), doi: 10.1063/1.4906419

Identifiers

DOI

10.12693/APhysPolA.130.1134