Nanoscale Deformation of GaAs Affected by Silicon Doping

• Authors: A. Majtyka , R. Nowak , D. Chrobak
• Languages of publication: EN

Abstracts

EN

Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.

Keywords

EN

64.70.kg; 61.72.J-

Discipline

• 61.72.J-: Point defects and defect clusters
• 64.70.kg: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 4
• Pages: 1127-1130

Dates

published

2016-10

Contributors

author

A. Majtyka

• Nordic Hysitron Laboratory, Department of Materials Science and Engineering, School of Chemical Technology, Aalto University, 00076 Aalto, Finland

author

R. Nowak

• Nordic Hysitron Laboratory, Department of Materials Science and Engineering, School of Chemical Technology, Aalto University, 00076 Aalto, Finland

author

D. Chrobak

• Institute of Materials Science, Faculty of Computer Science and Materials Science, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, Poland

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Identifiers

DOI

10.12693/APhysPolA.130.1127