Structure and Stress in Au/Cu Two-Layer System during Annealing at Different Temperature

• Authors: D. Chocyk
• Languages of publication: EN

Abstracts

EN

In this work, the Au/Cu two-layer systems, with the total thickness equal to 30 nm are studied. The two-layer systems were deposited by thermal evaporation in a UHV system on the silicon substrate at room temperature. After deposition the samples were annealed. We examined samples subjected to thermal cycle with the different maximum temperature. The X-ray diffraction and X-ray reflectometry are performed for systems before and after annealing. It was found that during the cycle of annealing above 150°C starts process of penetration of the Au layer by Cu atoms results in alloying. In Au/Cu systems, the final layer is the ordered Au/Cu₃ phase.

Keywords

EN

68.60.Bs; 68.60.Dv; 68.65.Ac

Discipline

• 68.60.Dv: Thermal stability; thermal effects
• 68.60.Bs: Mechanical and acoustical properties
• 68.65.Ac: Multilayers

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 4
• Pages: 1118-1120

Dates

published

2016-10

Contributors

author

D. Chocyk

• Department of Applied Physics, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

References

• [1] V.L. Devi, I. Jyothi, V.R. Reddy, Ch.-J. Choi, Open Appl. Phys. J. 5, 1 (2012), doi: 10.2174/1874183501205010001
• [2] Y. Yu, L. Zeng, Y. Jiang, J. Jie, IEEE Electron Dev. Lett. 34, 810 (2013), doi: 10.1109/LED.2013.2258319
• [3] J.W. Elmer, T.A. Palmer, E.D. Specht, J. Vac. Sci. Technol. A 24, 978 (2006), doi: 10.1116/1.2204926
• [4] M. Reiner, P. Pikart, C. Hugenschmidt, J. Alloys Comp. 64, 515 (2014), doi: 10.1016/j.jallcom.2013.10.094
• [5] A. Tynkova, G.L. Katona, G.A. Langer, S.I. Sidorenko, S.M. Voloshko, D.L. Beke, Beilstein J. Nanotechnol. 5, 1491 (2014), doi: 10.3762/bjnano.5.162
• [6] Z.-P. Luo, G.-P. Zhang, R. Schwaiger, Scr. Mater. 107, 67 (2015), doi: 10.1016/j.scriptamat.2015.05.02
• [7] G.G. Stoney, Proc. R. Soc. Lond. Ser. A 82, 172 (1909), doi: 10.1098/rspa.1909.0021
• [8] D.P.A. Flinn, D.S. Gardner, W.D. Nix, IEEE Trans. Electron. Dev. 34, 689 (1987), doi: 10.1109/T-ED.1987.22981
• [9] D. Chocyk, A. Proszynski, G. Gladyszewski, Microelect. Eng. 85, 2179 (2008), doi: 10.1016/j.mee.2008.05.037
• [10] C. Benazzouz, N. Benouattas, A. Bouabellou, Nucl. Instrum. Methods Phys. Res. B 230, 571 (2005), doi: 10.1016/j.nimb.2004.12.103

Identifiers

DOI

10.12693/APhysPolA.130.1118