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Abstracts
In this work, the Au/Cu two-layer systems, with the total thickness equal to 30 nm are studied. The two-layer systems were deposited by thermal evaporation in a UHV system on the silicon substrate at room temperature. After deposition the samples were annealed. We examined samples subjected to thermal cycle with the different maximum temperature. The X-ray diffraction and X-ray reflectometry are performed for systems before and after annealing. It was found that during the cycle of annealing above 150°C starts process of penetration of the Au layer by Cu atoms results in alloying. In Au/Cu systems, the final layer is the ordered Au/Cu₃ phase.
Discipline
Journal
Year
Volume
Issue
Pages
1118-1120
Physical description
Dates
published
2016-10
Contributors
author
- Department of Applied Physics, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv130n488kz