Thin Layers XRD Study Technique on an Example of Cobalt Tetrafluoro Phthalocyanine

• Authors: A. Sukhikh , T. Basova , S. Gromilov
• Languages of publication: EN

Abstracts

EN

Thin layers X-ray diffraction study technique utilizing single-crystal X-ray diffractometer equipped with microfocus X-ray tube is described. It is shown that the layers of the tetra-fluorinated cobalt phthalocyanine (CoPcF₄), deposited by thermal evaporation in vacuum on a polished surface of the substrate (glass, quartz), have a highly oriented polycrystalline structure. All the crystallites have the (00l) plane oriented along the surface of the substrate. CoPcF₄ X-ray diffraction pattern indexing was conducted and unit cell parameters were determined. It is shown that crystal phase of both polycrystalline powder and thin layers of CoPcF₄ are isostructural to that of α -CoPc.

Keywords

EN

61.05.cp; 68.55.Nq

Discipline

• 61.05.cp: X-ray diffraction
• 68.55.Nq: Composition and phase identification

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 4
• Pages: 889-891

Dates

published

2016-10

Contributors

author

A. Sukhikh

• Nikolaev Institute of Inorganic Chemistry SB RAS, Lavrentiev Pr. 3, Novosibirsk 630090, Russia
• Novosibirsk State University, Pirogova Str. 2, Novosibirsk, Russia

author

T. Basova

• Nikolaev Institute of Inorganic Chemistry SB RAS, Lavrentiev Pr. 3, Novosibirsk 630090, Russia
• Novosibirsk State University, Pirogova Str. 2, Novosibirsk, Russia

author

S. Gromilov

• Nikolaev Institute of Inorganic Chemistry SB RAS, Lavrentiev Pr. 3, Novosibirsk 630090, Russia
• Novosibirsk State University, Pirogova Str. 2, Novosibirsk, Russia

References

• [1] J. Zhang, J. Wang, H. Wang, Y. Donghang, Appl. Phys. Lett. 84, 142 (2004), doi: 10.1063/1.1638634
• [2] F. Wahab, M.H. Sayyad, M. Tahir, D.N. Khan, F. Aziz, M. Shahid, M.A. Munawar, J.A. Chaudry, G. Khan, Synth. Met. 198, 175 (2014), doi: 10.1016/j.synthmet.2014.10.007
• [3] F. Wahab, M.H. Sayyad, D.N. Khan, M. Tahir, F. Aziz, M. Shahid, M.A. Munawar, J.A. Chaudry, Mater. Sci. Semicond. Process. 26, 101 (2014), doi: 10.1016/j.mssp.2014.04.014
• [4] H.S. Soliman, A.A.M. Farag, N.M. Khosifan, M.M. El-Nahass, Thin Solid Films 516, 8678 (2008), doi: 10.1016/j.tsf.2008.04.102
• [5] C.Y. Kwong, A.B. Djurišiĉ, P.C. Chui, L.S.M. Lam, W.K. Chan, Appl. Phys. A 77, 555 (2003), doi: 10.1007/s00339-002-1493-6
• [6] T. Sizun, M. Bouvet, Y. Chen, J.M. Suisse, G. Barochi, J. Rossignol, Sens. Actuat. B 159, 163 (2011), doi: 10.1016/j.snb.2011.06.067
• [7] A. Kumar, N. Joshi, S. Samanta, A. Singh, A.K. Debnath, A.K. Chauhan, M. Roy, R. Prasad, K. Roy, M.M. Chehimi, D.K. Aswal, S.K. Gupta, Sens. Actuat. B 206, 653 (2015), doi: 10.1016/j.snb.2014.09.074
• [8] A. Singh, S. Samanta, A. Kumar, A.K. Debnath, R. Prasad, P. Veerender, V. Balouria, D.K. Aswal, S.K. Gupta, Org. Electron. 13, 2600 (2012), doi: 10.1016/j.orgel.2012.07.022
• [9] P. Dutta, Curr. Sci. 78, 1478 (2000)
• [10] R.D. Tarey, R.S. Rastogi, K.L. Chopra, The Rigaku J. 4, 11 (1987)
• [11] A. Singh, S. Samanta, A. Kumar, A.K. Debnath, D.K. Aswal, S.K. Gupta, J.V. Yakhmi, Y. Hayakawa, S.K. Deshpande, Org. Electron. 11, 1835 (2010), doi: 10.1016/j.orgel.2010.08.014
• [12] J. Guo, H. Li, H. He, D. Chu, R. Chen, J. Phys. Chem. C 115, 8494 (2011), doi: 10.1021/jp112197f
• [13] F. Petraki, H. Peisert, J. Uihlein, U. Aygül, T. Chassé, Beilstein J. Nanotechnol. 5, 524 (2014), doi: 10.3762/bjnano.5.61
• [14] J. Ouyang, K. Shigehara, A. Yamada, F.C. Anson, J. Electroanal. Chem. Interf. Electrochem. 297, 489 (1991), doi: 10.1016/0022-0728(91)80043-P
• [15] A.S. Sukhikh, T.V. Basova, S.A. Gromilov, J. Struct. Chem., 2016, in press
• [16] H.Y. Chen, J. Hou, A.E. Hayden, H. Yang, K.N. Houk, Y. Yang, Adv. Mater. 22, 371 (2010), doi: 10.1002/adma.200902469
• [17] W.H. Lee, J. Park, S.H. Sim, S.B. Jo, K.S. Kim, B.H. Hong, K. Cho, Adv. Mater. 23, 1752 (2011), doi: 10.1002/adma.201004099
• [18] H. Yang, T.J. Shin, M.M. Ling, K. Cho, C.Y. Ryu, Z. Bao, J. Am. Chem. Soc. 127, 11542 (2005), doi: 10.1021/ja052478e
• [19] P. Ballirano, R. Caminiti, C. Ercolani, A. Maras, M.A. Orru, J. Am. Chem. Soc. 120, 12798 (1998), doi: 10.1021/ja973815p
• [20] G.A. Williams, B.N. Figgis, R. Mason, S.A. Mason, P.E. Fielding, J. Chem. Soc. Dalton Trans. 9, 1688 (1980), doi: 10.1039/DT9800001688
• [21] W. Kraus, G. Nozle, J. Appl. Crystallogr. 29, 301 (1996), doi: 10.1107/S0021889895014920
• [22] S.I. Shihub, R.D. Gould, Phys. Status Solidi A 139, 129 (1993), doi: 10.1002/pssa.2211390111
• [23] M.M. El-Nahhas, Z. El-Gohary, H.S. Soliman, Opt. Laser Technol. 35, 523 (2003), doi: 10.1016/S0030-3992(03)00068-9

Identifiers

DOI

10.12693/APhysPolA.130.889