Impact of Annealing on the Relaxation Processes in Pt/SrTiO₃/Pt Thin Film Capacitors

• Authors: H. Ouajji , K. Raouadi , B. Yangui , J. Guillan
• Languages of publication: EN

Abstracts

EN

In this paper, the effect of the post-annealing on the dielectric properties of SrTiO₃ thin films (200 nm) grown by ion beam sputtering has been investigated. The measured dielectric constant dramatically increased after the post-annealing which is a consequence of the formation of the perovskite phase. A low frequency relaxation mechanism is clearly identified in the amorphous state of this material. Once crystallized, a second relaxation mechanism of lower amplitude is detected at high frequencies and for high measuring temperature. It is assumed that this second relaxation process is related to the space charges bound at the grain boundaries, whereas the first one was assigned to the thermally activated motions of the ionized oxygen vacancies and interfacial polarization under alternating field.

Keywords

EN

84.32.Tt; 84.37.+q; 81.15.Cd; 73.61.-r; 77.22.Gm; 76.60.Es

Discipline

• 77.22.Gm: Dielectric loss and relaxation
• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 84.37.+q: Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
• 84.32.Tt: Capacitors(for electrochemical capacitors and supercapacitors, see 82.47.Uv)
• 76.60.Es: Relaxation effects
• 81.15.Cd: Deposition by sputtering

• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 3
• Pages: 791-794

Dates

published

2016-09

received

2011-06-05

(unknown)

2016-03-08

Contributors

author

H. Ouajji

• Grenoble Electrical Engineering Laboratory (G2ELab), University of Grenoble, 25 Rue des Martyrs, BP 166, 38042 Grenoble Cedex 9, France
• Laboratory for Materials, Organization and Properties (LMOP), University of Tunis El Manar, Campus Universitaire-El Manar, 2092 Tunis, Tunisia

author

K. Raouadi

• Laboratory for Materials, Organization and Properties (LMOP), University of Tunis El Manar, Campus Universitaire-El Manar, 2092 Tunis, Tunisia

author

B. Yangui

• Laboratory for Materials, Organization and Properties (LMOP), University of Tunis El Manar, Campus Universitaire-El Manar, 2092 Tunis, Tunisia

author

J. Guillan

• STMicroelectronics, 38926 Crolles Cedex, France

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Identifiers

DOI

10.12693/APhysPolA.130.791