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2016 | 130 | 1 | 463-465
Article title

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

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Abstracts
EN
The attention has been focused on the optical properties of structures of the form Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al as a function of the deposition temperature of the a-Si_{1-x}C_x:H films. The amorphous SiC:H films were obtained for different temperatures ranging from 150°C up to 500°C. By photoluminescence, blue emission from all the structures was observed at room temperature and a high emission was obtained for sample whose amorphous film was deposited at 500°C. The spectral response of Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al structures with a-Si_{1-x}C_x:H film deposited at 250°C, exhibits a maximum value at λ=950 nm while for structure with a-Si_{1-x}C_x:H film obtained at 150°C, a maximum value of λ was observed at 400 nm.
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Contributors
author
  • Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria
author
  • Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria
author
  • Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria
author
  • University of Science and Technology Houari Boumediene, PB 32, ElAlia, Bab Ezzouar, Algiers, Algeria
author
  • Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv130n1123kz
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