Fabrication of Pyramid/Nanowire Binary Structure on n-Type Silicon Using Chemical Etching

• Authors: Y. Si Ahmed , T. Hadjersi , R. Chaoui
• Languages of publication: EN

Abstracts

EN

A pyramid and nanowire binary structure of n-type monocrystalline silicon surface was fabricated by two-step chemical etching process. The nanowire surface is formed by electroless etching in HF-AgNO₃ aqueous solution after being textured in KOH/IPA solution. Optical absorption was compared between this structure and that of random pyramid arrays. The effective reflectance calculated between 400 and 1100 nm decreased from ≈ 40% to ≈ 15% after pyramidal texturing and ≈ 4% after formation of vertically aligned nanowires with a length less than 1 μ m. This simple and low-cost surface structuring technique holds high potential for the manufacture of terrestrial silicon solar cells with reduced optical losses.

Keywords

EN

88.40.jj

Discipline

• 88.40.jj: Silicon solar cells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 1
• Pages: 385-387

Dates

published

2016-07

Contributors

author

Y. Si Ahmed

• Centre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division Technologies Emergentes des Semi-conducteurs pour l'Energétique (TESE), 2 Bd Frantz Fanon, B.P. 140, Alger-7 Merveilles, Algiers, Algeria
• Faculté des Sciences et Technologie, Université de Khemis Miliana, route de Theniet El Had, 44225, Khemis Miliana, Algeria

author

T. Hadjersi

• Centre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division Technologies Emergentes des Semi-conducteurs pour l'Energétique (TESE), 2 Bd Frantz Fanon, B.P. 140, Alger-7 Merveilles, Algiers, Algeria

author

R. Chaoui

• Centre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division Technologies Emergentes des Semi-conducteurs pour l'Energétique (TESE), 2 Bd Frantz Fanon, B.P. 140, Alger-7 Merveilles, Algiers, Algeria

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Identifiers

DOI

10.12693/APhysPolA.130.385