Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization

• Authors: M. Ahmetoglu , A. Kara , B. Kucur
• Languages of publication: EN

Abstracts

EN

Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.

Keywords

EN

82.35.-x; 85.30.-z

Discipline

• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 82.35.-x: Polymers: properties; reactions; polymerization(for polymers in electrochemistry, see 82.45.Wx)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 1
• Pages: 206-208

Dates

published

2016-07

Contributors

author

M. Ahmetoglu

• Uludag University, Physics Department, Bursa, Turkey

author

A. Kara

• Uludag University, Physical Chemistry Department, Bursa, Turkey

author

B. Kucur

• Uludag University, Physics Department, Bursa, Turkey

References

• [1] K.Ng. Kwok, Complete Guide to Semiconductor Devices, McGraw-Hill, New York 1995
• [2] J. Singh, Semiconductor Optoelectronics Physics and Technology, McGraw-Hill, New York 1995
• [3] S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York 1981
• [4] S. Kasap, P. Capper, Handbook of Electronic and Photonic Materials, Springer, Berlin 2006
• [5] E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts, Clarendon Press, Oxford 1988
• [6] N. Şimşir, H. Şafak, Ö.F. Yüksel, M. Kuş, Curr. Appl. Phys. 12, 1510 (2012), doi: 10.1016/j.cap.2012.04.028
• [7] Ö. Vural, Y. Şafak, Ş. Altındal, A. Türüt, Curr. Appl. Phys. 10, 761 (2010), doi: 10.1016/j.cap.2009.09.011
• [8] N. Tuğluoğlu, S. Karadeniz, Curr. Appl. Phys. 12, 1529 (2012), doi: 10.1016/j.cap.2012.04.027
• [9] A.A.M. Farag, W.G. Osiris, I.S. Yahia, Synth. Met. 161, 1805 (2011), doi: 10.1016/j.synthmet.2011.05.038
• [10] A. Kırsoy, M. Ahmetoglu, M. Okutan, F. Yakuphanoglu, J. Nanoelectron. Optoelectron. 11, 108 (2016), doi: 10.1166/jno.2016.1884
• [11] M. Ahmetoglu (Afrailov), A. Kara, N. Tekin, S. Beyaz, H. Köçkar, Thin Solid Films 520, 2106 (2012), doi: 10.1016/j.tsf.2011.08.066
• [12] A. Kırsoy, M. Ahmetoglu (Afrailov), A. Asimov, B. Kucur, Acta Phys. Pol. A 128, B-170 (2015), doi: 10.12693/APhysPolA.128.B-170
• [13] Ş. Karataş, A. Türüt, Physica B 381, 199 (2006), doi: 10.1016/j.physb.2006.01.412

Identifiers

DOI

10.12693/APhysPolA.130.206