Investigation of the Characteristics of the Boron Doped MnO Films Deposited by Spray Pyrolysis Method

• Authors: M. Bedir , A. Tunç , M. Öztas
• Languages of publication: EN

Abstracts

EN

Boron doped MnO films were prepared by spray pyrolysis technique at 375°C substrate temperature, which is a low cost and large area technique to be well-suited for the manufacture of solar cells, using boric acid (H₃BO₃) as dopant source, and their properties were investigated as a function of doping concentration. Boron doping was achieved by adding 0.1 M, 0.2 M, 0.3 M, and 0.4 M H₃BO₃ to the starting solution. X-ray analysis showed that the films were polycrystalline fitting well with a cubic structure and have preferred orientation in (111), (220) and (311) directions. Optical band gap of the undoped and B-doped MnO films were found to vary from 2.25 to 2.54 eV. The changes observed in the energy band gap and structural properties of the films related to the boric acid concentration are discussed in detail.

Keywords

EN

71.20.Nr; 78.20.-e

Discipline

• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 71.20.Nr: Semiconductor compounds

• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 6
• Pages: 1159-1164

Dates

published

2016-06

received

2015-04-28

(unknown)

2015-09-21

Contributors

author

M. Bedir

• University of Gaziantep, Deparment of Physics Engineering, Gaziantep, Turkey

author

A. Tunç

• University of Gaziantep, Deparment of Physics Engineering, Gaziantep, Turkey

author

M. Öztas

• University of Yalova, Chemical and Process Engineering, Yalova, Turkey

References

• [1] J. Poortmans, V. Arkhipov, Thin Film Solar Cells Fabrication, Characterization and Applications, Wiley, Chichester 2006, doi: 10.1002/0470091282
• [2] M. Ortega-Lopez, A. Morales-Acevedo, Thin Solid Films 330, 96 (1998), doi: 10.1016/S0040-6090(98)00568-9
• [3] J.M. Peza-Tapia, V.M. Sanchez-Resendiz, M. Alb or-Aguilera, J.J. Cayente-Romero, L.R. De Leon-Gutierrez, M. Ortega-Lopez, Thin Solid Films 490, 142 (2005), doi: 10.1016/j.tsf.2005.04.044
• [4] N. Badera, B. Godbole, S.B. Srivastava, P.N. Vishwakarma, L.S. Sharath Chandra, J. Deepti, V.G. Sathe, V. Ganesan, Sol. En. Mater. Sol. Cells 92, 1646 (2008), doi: 10.1016/j.solmat.2008.07.016
• [5] S.A. Mayen-Hernandez, S.J. Sandoval, R.C. Perez, G.T. Delgado, B.S. Chao, O.J. Sandoval, J. Cryst. Growth 256, 12 (2003), doi: 10.1016/S0022-0248(03)01315-0
• [6] J. Mu, Z.F. Gu, L. Wang, Z.Q. Zhang, H. Sun, S.Z. Kang, J. Nanopartic. Res. 10, 197 (2008), doi: 10.1007/s11051-007-9216-8
• [7] Z. Pingtang, Z. Qiumei, H. Xianliang, T. Hao, H. Kaixun, J. Cryst. Growth 310, 4268 (2008), doi: 10.1016/j.jcrysgro.2008.06.076
• [8] L. David, C. Bradford, X. Tang, T.C.M. Graham, K.A. Prior, B.C. Cavenett, J. Cryst. Growth 251, 591 (2003), doi: 10.1016/S0022-0248(02)02205-4
• [9] E. Jahne, O. Goede, V. Weinhold, Phys. Status Solidi B 146, K157 (1988)
• [10] H.M. Pathan, S.S. Kale, C.D. Lokhande, S.H. Han, O.S. Joo, Mater. Res. Bull. 42, 1565 (2007), doi: 10.1016/j.materresbull.2006.11.017
• [11] D.B. Fan, H. Wang, Y.C. Zhang, J. Cheng, B. Wang, H. Yan, Mater. Chem. Phys. 80, 44 (2003), doi: 10.1016/S0254-0584(02)00518-7
• [12] D. Fan, X. Yang, H. Wang, Y. Zhang, H. Yan, , Physica B Condens. Matter 337, 165 (2003), doi: 10.1016/S0921-4526(03)00399-5
• [13] S. Sur, Z. Öztürk, M. Öztas, M. Bedir, Y. YÖzdemir, Phys. Scr. 84, 015701 (2011), doi: 10.1088/0031-8949/84/01/015701
• [14] J.C. Nardi, J. Electrochem. Soc. 132, 1787 (1985), doi: 10.1149/1.2114218
• [15] L. Sanchez, J. Faray, J.P. Pereira-Ramos, L. Hernan, J. Morales, L. Tirado, J. Mater. Chem. 6, 37 (1996), doi: 10.1039/JM9960600037
• [16] R.N. Reddy, R.G. Reddy, J. Power Sourc. 132, 315 (2004), doi: 10.1016/j.jpowsour.2003.12.054
• [17] R.N. Reddy, R.G. Reddy, J. Power Sourc. 156, 700 (2006), doi: 10.1016/j.jpowsour.2005.05.071
• [18] C.N. Xu, K. Miyazaki, T. Watanable, Sens. Actuat. B 46, 87 (1998), doi: 10.1016/S0925-4005(97)00330-4
• [19] K.J. Kim, Y.R. Park, J. Cryst. Growth 270, 162 (2004), doi: 10.1016/j.jcrysgro.2004.06.019
• [20] B.D. Cullity, S.R. Stock, Elements of X-ray Diffraction, 3rd ed., Prentice Hall, New Jersey 2001
• [21] B.N. Pawar, S.R. Jadkar, M.G. Takwal, J. Phys. Chem. Solids 66, 1779 (2005), doi: 10.1016/j.jpcs.2005.08.086
• [22] M. Öztas, M. Bedir, Thin Solid Films 516, 1703 (2008), doi: 10.1016/j.tsf.2007.05.018
• [23] K.J. Kim, Y.R. Park, J. Cryst. Growth 270, 162 (2004), doi: 10.1016/j.jcrysgro.2004.06.019
• [24] M. Bedir, M. Öztaş, S.S. Çelik, T.T. Özdemir, Acta Phys. Pol. A 126, 840 (2014), doi: 10.12693/APhysPolA.126.840
• [25] I.A. Ovid'ko, Rev. Adv. Mater. Sci. 1, 61 (2000)
• [26] I.M. Khan, in: Handbook of Thin Film Technology, Eds. L.I. Maissel, R. Gland, McGraw-Hill, New York 1970, Ch. 10
• [27] M. Bedir, M. Oztas, O.F. Bakkaloglu, R. Ormancı, Eur. Phys. J. B 45, 465 (2005), doi: 10.1140/epjb/e2005-00207-3
• [28] F.A. Kroger, The Chemistry of Imperfect Crystals, North-Holland, Amsterdam 1964, doi: 10.1002/bbpc.19640680615
• [29] N. Jabena Begum, K. Ravichandrann, J. Phys. Chem. Solids 74, 841( 2013), doi: 10.1016/j.jpcs.2013.01.029
• [30] O.S. Heavens, Optical Properties of Thin Solid Films, Dover, New York 1965

Identifiers

DOI

10.12693/APhysPolA.129.1159