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2016 | 129 | 6 | 1155-1158
Article title

Realization of p-Type Conductivity in ZnO via Potassium Doping

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EN
Abstracts
EN
Our work focuses on the study of the electronic structure of undoped and K-doped ZnO using density functional theory as implemented in the Wien2k package. Generalized gradient approximation and GGA plus Tran-Blaha-modified Becke-Johnson (TB-mBJ) were used to calculate the exchange-correlation energy. From the electronic properties, ZnO has a direct band gap in (Γ-Γ) direction with a value of 0.76 eV within GGA and 2.63 eV within GGA + TB-mBJ. For the K-doped ZnO (12.5%) the gap was found to be 1.15 eV within GGA and 3.28 eV within GGA + TB-mBJ, we have observed that an emersion of a new narrow band exists in the valence band which is mainly caused by K 3p states with a little Zn 4s and Zn 3d effect.
Keywords
EN
Publisher

Year
Volume
129
Issue
6
Pages
1155-1158
Physical description
Dates
published
2016-06
received
2015-12-27
(unknown)
2016-04-23
(unknown)
2016-05-19
Contributors
author
  • Department of Physics, Faculty of Material Sciences, Ibn Khaldoun University - Tiaret, BP 78, Zaaroura Road, 14000 Tiaret, Algeria
author
  • Department of Physics, Faculty of Material Sciences, Ibn Khaldoun University - Tiaret, BP 78, Zaaroura Road, 14000 Tiaret, Algeria
author
  • Department of Physics, Faculty of Material Sciences, Ibn Khaldoun University - Tiaret, BP 78, Zaaroura Road, 14000 Tiaret, Algeria
author
  • Department of Physics, Faculty of Material Sciences, Ibn Khaldoun University - Tiaret, BP 78, Zaaroura Road, 14000 Tiaret, Algeria
author
  • Department of Physics, Faculty of Material Sciences, Ibn Khaldoun University - Tiaret, BP 78, Zaaroura Road, 14000 Tiaret, Algeria
author
  • Modeling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbès, Sidi Bel Abbès 22000, Algeria
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv129n614kz
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