Structure, Morphology, and Band Gap of Ti-V-O Mixed Oxides Processed by Coprecipitation and Calcination

• Authors: M. Park , Y. Lim , Y. Sung , D. Kwak , J. Lee
• Languages of publication: EN

Abstracts

EN

Mixed oxides of Ti-V-O were co-precipitated by wet process using TiCl₄ and VOCl₃ as starting materials. As-precipitated gels were calcinated at 800°C for 4 hours in oxygen atmosphere. Effects of vanadium content on the structural evolution, morphology, and band gap of Ti-V-O oxides were investigated. Calcination has produced mixtures of TiO₂/VO₂/V₂O₅ oxides and has allowed formation of Ti_{1-x}V_{x}O₂. Lattice parameters of rutile TiO₂ were precisely measured to investigate vanadium substitution into single rutile phase of Ti_{1-x}V_{x}O₂ with varying vanadium content. As vanadium addition was increased, particles were coarsening rapidly during calcination. Band gap of the Ti-V-O oxides was measured using ultraviolet visible light spectrometer. A decrease of band gap down to 1.7 eV with the addition of maximum of 10 at.% of vanadium was measured, which is due to the formation of single phase of Ti_{1-x}V_{x}O₂ as well as the formation of metallic VO₂ or V₂O₅ particles.

Keywords

EN

81.05.Hd

Discipline

• 81.05.Hd: Other semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 4
• Pages: 875-877

Dates

published

2016-04

Contributors

author

M. Park

• Department of Materials Engineering, Kyungsung University, Busan, 608-736, Korea

author

Y. Lim

• Department of Materials Engineering, Kyungsung University, Busan, 608-736, Korea

author

Y. Sung

• Department of Electrical Engineering, Kyungsung University, Busan, 608-736, Korea

author

D. Kwak

• Department of Electrical Engineering, Kyungsung University, Busan, 608-736, Korea

author

J. Lee

• Department of Materials Engineering, Kyungsung University, Busan, 608-736, Korea

References

• [1] K.I. Hadjiivanov, D.K. Klissurski Chem. Soc. Rev. 25, 61 (1996), doi: 10.1039/CS9962500061
• [2] A. Heller, Acc. Chem. Res. 28, 503 (1995), doi: 10.1021/ar00060a006
• [3] M.W. Park, K.Y. Chun, Electron. Mater. Lett. 5, 7 (2009), doi: 10.3365/eml.2009.03.007
• [4] A.J. Nozik, Ann. Rev. Phys. Chem. 29, 189 (1978), doi: 10.1146/annurev.pc.29.100178.001201
• [5] T.E. Phillips, K. Moorjani, J.C. Murphy, T.O. Poehler, J. Electrochem. Soc. 129, 1210 (1982), doi: 10.1149/1.2124088
• [6] G.K. Mor, H.E. Prakasam, O.K. Varghese, K. Shankar, C.A. Grimes, Nano Lett. 7, 2356 (2007), doi: 10.1021/nl0710046
• [7] S. Somasundaram, N. Tacconi, C.R. Chenthamarakshan, K. Rajeshwar, J. Electroanal. Chem. 577, 167 (2005), doi: 10.1016/j.jelechem.2004.11.021
• [8] M.-W. Park, H.-J. Kwon, J.-S. Lee, J.-C. Park, J.-H. Kim, C.-G. Kim, Electron. Mater. Lett. 7, 327, (2011), doi: 10.1007/s13391-011-0430-2

Identifiers

DOI

10.12693/APhysPolA.129.875