Technology and Investigation of Ohmic Contacts to Thermoelectric Materials

• Authors: Y. Shtern , R. Mironov , M. Shtern , A. Sherchenkov , M. Rogachev
• Languages of publication: EN

Abstracts

EN

Technology is developed, materials and regimes of the fabrication of ohmic contacts to the effective thermoelectric materials Bi_{2}Te_{2.8}Se_{0.2} (n-type) and Bi_{0.5}Sb_{1.5}Te_{3} (p-type) are determined. Ohmic contacts were obtained by the vacuum deposition of nickel. Factors determining adhesion strength and resistivity of fabricated contacts are determined. Process of surface preparation of the thermoelectric materials before the ohmic contact deposition is optimized during the technology development. The use of electrochemical polishing, ultrasound treatment, finish cleaning in toluene and isopropyl alcohol vapor, and annealing in vacuum allowed achieving stable results in the formation of contacts. It was shown that contacts fabricated using of electron-beam evaporation of nickel possess maximum adhesion strength of 18-19 N/mm². It was found that high adhesion is caused by the existence of transition layer in the metal-thermoelectric material contact range, formed due to the interaction of metal with the components of thermoelectric material. Proposed technology allows obtaining ohmic contacts with the resistance of the unit area not exceeding 10^{-10} Ohm m².

Keywords

EN

68.35.Np

Discipline

• 68.35.Np: Adhesion(for polymer adhesion, see 82.35.Gh: for cell adhesion, see 87.17.Rt in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 4
• Pages: 785-787

Dates

published

2016-04

Contributors

author

Y. Shtern

• National Research University of Electronic Technology, Russian Federation, Moscow, Zelenograd, Shokin Square, Building 1

author

R. Mironov

• National Research University of Electronic Technology, Russian Federation, Moscow, Zelenograd, Shokin Square, Building 1

author

M. Shtern

• National Research University of Electronic Technology, Russian Federation, Moscow, Zelenograd, Shokin Square, Building 1

author

A. Sherchenkov

• National Research University of Electronic Technology, Russian Federation, Moscow, Zelenograd, Shokin Square, Building 1

author

M. Rogachev

• National Research University of Electronic Technology, Russian Federation, Moscow, Zelenograd, Shokin Square, Building 1

References

• [1] W. Heywang, Amorphe und Polykristalline Halbleiter, Halbleiter-Elektronik, Vol. 18, Springer Berlin Heidelberg, 1984, p. 252, doi: 10.1007/978-3-642-95447-4
• [2] Yu.I. Stern, M.Yu. Shtern, A.A. Sherchenkov, Russ. Microelectron. 41, 393 (2012), doi: 10.1134/S1063739712070098
• [3] A.J. Kinlok, Adhesion and Adhesives, Springer Netherlands, 1987, p. 441, doi: 10.1007/978-94-015-7764-9
• [4] S.R. Morrison, The Chemical Physics of Surfaces, Springer US, 1990, p. 438, doi: 10.1007/978-1-4899-2498-8
• [5] S.M. Sze, Physics of Semiconductor Devices, 2006, p. 832, doi: 10.1002/0470068329

Identifiers

DOI

10.12693/APhysPolA.129.785