Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode

• Authors: B. Kucur , M. Ahmetoglu , I. Andreev , E. Kunitsyna , M. Mikhailova , Y. Yakovlev
• Languages of publication: EN

Abstracts

EN

In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I_{sc}) and open circuit voltage (V_{oc}). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.

Keywords

EN

73.40.Lq; 72.40.+w; 85.60.-q

Discipline

• 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)
• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 72.40.+w: Photoconduction and photovoltaic effects

• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 4
• Pages: 767-769

Dates

published

2016-04

Contributors

author

B. Kucur

• Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059, Bursa, Turkey

author

M. Ahmetoglu

• Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059, Bursa, Turkey

author

I. Andreev

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Saint Petersburg 194021, Russia

author

E. Kunitsyna

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Saint Petersburg 194021, Russia

author

M. Mikhailova

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Saint Petersburg 194021, Russia

author

Y. Yakovlev

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Saint Petersburg 194021, Russia

References

• [1] T. Bauer, Thermophotovoltaics - Basic Principles and Critical Aspects of System Design, Springer, 2011, doi: 10.1007/978-3-642-19965-3
• [2] R.E. Nelson, Semicond. Sci. Technol. 18, 141 (2003), doi: 10.1088/0268-1242/18/5/301
• [3] V.P. Khvostikov, S.V. Sorokina, N.S. Potapovich, O.A. Khvostikova, A.V. Malievskaya, A.S. Vlasov, M.Z. Shvarts, N.Kh. Timoshina, V.M. Andreev, Semiconductors. 44, 255 (2010), doi: 10.1134/S1063782610020223
• [4] M. Ahmetoglu, B. Kucur, I.A. Andreev, E.V. Kunitsyna, M.P. Mikhailova, Yu.P. Yakovlev, Infrared Phys. Techn. 53, 399 (2010), doi: 10.1016/j.infrared.2010.07.007
• [5] M.H.M. Reddy, J.T. Olesberg, C. Cao, J.P. Prineas, Semicond. Sci. Technol. 21, 267 (2006), doi: 10.1088/0268-1242/21/3/009
• [6] M.G. Mauk, V.M. Andreev, Semicond. Sci. Technol. 18, S191 (2003), doi: 10.1088/0268-1242/18/5/308
• [7] K. Qiu, A.C.S. Hayden, Appl. Energy. 91, 304 (2012), doi: 10.1016/j.apenergy.2011.09.041
• [8] M.P. Mikhailova, A.N. Titkov, Semicond. Sci. Technol. 9, 1279 (1994), doi: 10.1088/0268-1242/9/7/001
• [9] Y. Wang, N.F. Chen, X.W. Zhang, T.M. Huang, Z.G. Yin, Y.M. Bai, Semicond. Sci. Technol. 25, 095002 (2010), doi: 10.1088/0268-1242/25/9/095002
• [10] V.M. Andreev, Next Generation Photovoltaics, Ed. A. Marti, A. Luque, Inst. Phys. Publish, U.K. 2004
• [11] B. Kucur, M. Ahmetoglu, I.A. Andreev, E.V. Kunitsyna, M.P. Mikhailova, Y.P. Yakovlev, Acta Phys. Pol. A 125, 411 (2014), doi: 10.12693/APhysPolA.125.411
• [12] E.V. Kunitsyna, I.A. Andreev, M.P. Mikhailova, Ya.A. Parkhomenko, Yu.P. Yakovlev, Proceedings of SPIE., 2000, p. 4340, doi: 10.1117/12.407738
• [13] S.M. Sze, Physics of Semiconductor Devices Physics and Technology, Wiley, New York, 1985
• [14] J.L. Moll, Physics of Semiconductors, McGraw Hill, New York, 1964
• [15] F. Bouzid, L. Dehimi, Rev. Energies Renouvelables 15, 383 (2012)

Identifiers

DOI

10.12693/APhysPolA.129.767