Preferences help
enabled [disable] Abstract
Number of results
2016 | 129 | 4 | 717-720
Article title

Investigation of the Crystallization Kinetics in Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application

Title variants
Languages of publication
In this work the mechanism and kinetics of crystallization of the Ge₂Sb₂Te₅+Bi thin films were investigated using differential scanning calorimetry. Ge₂Sb₂Te₅ with different amounts of Bi (0, 0.2, 0.5, 0.8, 1, 3, 5 wt.%) was synthesized using quenching technique. Thin films were prepared by thermal evaporation of synthesized materials. X-ray diffraction has shown that synthesized materials had trigonal modification of Ge₂Sb₂Te₅. Introduction of Bi led to the appearance of trigonal modification of Bi₂Ge₂Te₅, which indicates on the replacement of Sb by Bi. As-deposited thin films were amorphous up to 3% of Bi. Higher concentrations of Bi led to the appearance of crystalline phases. Composition of thin films was verified by Rutherford backscattering, and was found to be close to that of the synthesized materials. The joint application of model-free Ozawa-Flynn-Wall and model-fitting Coates-Redfern methods allowed to estimate kinetic triplet for crystallization process of GST225+Bi thin films, and to predict data processing and storage times of the phase change memory cells. It was shown that GST225+0.5 wt.% Bi thin films have the most promising kinetic characteristics among the investigated materials, due to the predicted smallest data processing and largest storage times.
  • National Research University of Electronic Technology, Building 1, Shokin square, Zelenograd, Moscow, Russian Federation
  • National Research University of Electronic Technology, Building 1, Shokin square, Zelenograd, Moscow, Russian Federation
  • Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow, Russian Federation
  • National Research University of Electronic Technology, Building 1, Shokin square, Zelenograd, Moscow, Russian Federation
  • [1] S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968), doi: 10.1103/PhysRevLett.21.1450
  • [2] S.R. Ovshinsky, H. Fritzsche, Metall. Trans. 2, 641 (1971), doi: 10.1007/BF02662715
  • [3] J. Feileib, S. Iwasa, S.C. Moss, J.P. Neufville, S.R. Ovchinsky, J. Non-Cryst. Solids 8-10, 909 (1972), doi: 10.1016/0022-3093(72)90246-3
  • [4] E.R.Meinders, A.V. Mijiritskii, L. van Pieterson, M. Wuttig, Optical Data Storage Phase-Change Media and Recording, Philips Research Book Series, V. 4, Springer-Verlag, Berlin 2006
  • [5] T. Narahara, S. Kobayashi, M. Hattori, Y. Shimpuku, G. van den Enden, J. Kahlman, M. van Dijk, R. van Woudenberg, Jpn. J. Appl. Phys 39, 912 (2000), doi: 10.1143/JJAP.39.912
  • [6] N. Yamada, E. Ohno, N. Akahira, K. Nishiuchi, K. Nagata, M. Takao, Jpn. J. Appl. Phys. 26, 61 (1987), doi: 10.7567/JJAPS.26S4.61
  • [7] S. Raoux, M. Wuttig, Phase Change Materials, Springer, New York 2009
  • [8] A.V. Kolobov, P. Fons, J. Tominaga, A.I. Frenkel, A.L. Ankudinov, S.N. Yannopoulos, K.S. Andrikopoulos, T. Uruga, Jpn. J. Appl. Phys. 44, 3345 (2005), doi: 10.1143/JJAP.44.3345
  • [9] N. Yamada, MRS Bull. 21, 48 (1996)
  • [10] M. Wuttig, D.L. Sebkink, D. Wamwangi, W. Wełnic, M. Gilleßen, R. Dronskowski, Nature Mater. 6, 122 (2007), doi: 10.1038/nmat1807
  • [11] A.V. Kolobov, P. Fons, J. Tominaga, S. Ovshinsky, Phys. Rev. B 87, 165206 (2013), doi: 10.1103/PhysRevB.87.165206
  • [12] T.H. Lee, S.R. Elliott, Phys. Rev. B 84, 094124 (2011), doi: 10.1103/PhysRevB.84.094124
  • [13] J.J. Gervacio Arciniega, E. Prokhorov, F. Espinoza Beltran, G. Trapaga, Crystallization - Science and Technology, Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application, Chap. 16, InTech, Croatia 2012, doi: 10.5772/35577
  • [14] K.N. Chen, L. Krusin-Elbaum, C. Cabral Jr., C. Lavoie, J. Sun, S. Rossnagel, Non-Volatile Semiconductor Memory Workshop (2006), IEEE, 2006, doi: 10.1109/.2006.1629511
  • [15] A. Sherchenkov, S. Kozyukhin, A. Babich, P. Lazarenko. J. Non-Cryst. Solids 377, 26 (2013), doi: 10.1016/j.jnoncrysol.2013.01.006
  • [16] N.Kh. Abrikosov, G.T. Danilova-Dobryakova, Izv. Akad. Nauk SSSR, Neorg. Mater. 1, 204 (1965)
  • [17] S.A. Kozyukhin, A.A. Sherchenkov, E.V. Gorschkova, V. Kudoyarova, A. Vargunin, Phys. Status Solidi C 7, 848 (2010), doi: 10.1002/pssc.200982703
  • [18] S. Kozyukhin, A. Sherchenkov, A. Babich, P. Lazarenko, Huy Phuc Nguyen, O. Prikhodko, Canad. J. Phys. 92, 684 (2014), doi: 10.1139/cjp-2013-0607
  • [19] M.E. Brown, Handbook of thermal analysis and Calorimetry, Elsiever Science B.V., Amsterdam 1998
  • [20] N. Mehta, A. Kumar, J. Therm. Anal. Calorim. 83, 669 (2006), doi: 10.1007/s10973-005-6786-5
Document Type
Publication order reference
YADDA identifier
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.