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2016 | 129 | 4 | 717-720
Article title

Investigation of the Crystallization Kinetics in Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application

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In this work the mechanism and kinetics of crystallization of the Ge₂Sb₂Te₅+Bi thin films were investigated using differential scanning calorimetry. Ge₂Sb₂Te₅ with different amounts of Bi (0, 0.2, 0.5, 0.8, 1, 3, 5 wt.%) was synthesized using quenching technique. Thin films were prepared by thermal evaporation of synthesized materials. X-ray diffraction has shown that synthesized materials had trigonal modification of Ge₂Sb₂Te₅. Introduction of Bi led to the appearance of trigonal modification of Bi₂Ge₂Te₅, which indicates on the replacement of Sb by Bi. As-deposited thin films were amorphous up to 3% of Bi. Higher concentrations of Bi led to the appearance of crystalline phases. Composition of thin films was verified by Rutherford backscattering, and was found to be close to that of the synthesized materials. The joint application of model-free Ozawa-Flynn-Wall and model-fitting Coates-Redfern methods allowed to estimate kinetic triplet for crystallization process of GST225+Bi thin films, and to predict data processing and storage times of the phase change memory cells. It was shown that GST225+0.5 wt.% Bi thin films have the most promising kinetic characteristics among the investigated materials, due to the predicted smallest data processing and largest storage times.
Physical description
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