Study of Two-Dimensional Photonic Crystal Microcavities as a Function of Refractive Index

• Authors: R. Moukhtari , A. Hocini , D. Khedrouche
• Languages of publication: EN

Abstracts

EN

Quality factor of two-dimensional photonic crystals microcavity fabricated by SiO₂/ZrO₂ or SiO₂/TiO₂ in which the refractive index varied in the range of 1.51 to 1.58 has been investigated in the present paper. The structure studied consists of circular rods of radius r embedded in air slab, while a is the constant of triangular lattice. Finite difference time domain method with perfectly matched layers was used to calculate the transmission spectrum by FullWAVE software. The results of simulation clearly demonstrate the existences of resonance wavelength of which the position and the highest Q (Q ≈ 4×10⁵) value are strongly affected by refractive index. We demonstrate that the calculated Q factor for the designed cavity increases by a factor of three relative for a cavity without increasing the refractive index.

Keywords

EN

42.70.Qs; 04.30.Nk; 41.20.Jb; 42.82.-m

Discipline

• 42.70.Qs: Photonic bandgap materials(for photonic crystal lasers, see 42.55.Tv)
• 41.20.Jb: Electromagnetic wave propagation; radiowave propagation(for light propagation, see 42.25.Bs; for electromagnetic waves in plasma, see 52.35.Hr; for atmospheric, ionospheric, and magnetospheric propagation, see 92.60.Ta, 94.20.Bb, and 94.30.Tz, respectively; see also 94.05.Pt Wave/wave, wave/particle interactions, in space plasma physics)
• 42.82.-m: Integrated optics
• 04.30.Nk: Wave propagation and interactions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 4
• Pages: 556-558

Dates

published

2016-04

Contributors

author

R. Moukhtari

• Laboratoire d'Analyse des Signaux et Systèmes, Department of Electronics, Mohamed Boudiaf University of M'sila, B.P. 166, Route Ichebilia, M'sila, 28000 Algeria

author

A. Hocini

• Laboratoire d'Analyse des Signaux et Systèmes, Department of Electronics, Mohamed Boudiaf University of M'sila, B.P. 166, Route Ichebilia, M'sila, 28000 Algeria

author

D. Khedrouche

• Laboratoire d'Analyse des Signaux et Systèmes, Department of Electronics, Mohamed Boudiaf University of M'sila, B.P. 166, Route Ichebilia, M'sila, 28000 Algeria

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Identifiers

DOI

10.12693/APhysPolA.129.556