The Calculation for Strain Distributions and Electronic Structure of InAs/GaAs Quantum Dots Based on the Eight-Band k·p Theory

• Authors: Changgan Shu , Yumin Liu
• Languages of publication: EN

Abstracts

EN

In order to analyze the strain distribution of InAs/GaAs quantum dot in a pyramidal geometry, the traditional calculation method is based on the single band envelope approximation with the modified band edge from the eight band k·p theory. In this paper, we use the eight band k·p Hamiltonian to calculate, and the piezoelectric effects and the electronic structure are also discussed subsequently. To this end, some necessarily derived formulae in calculations about using the finite element calculation software COMSOL are presented in this paper. The results show the details about strain distributions, piezoelectric effects and electronic structure of an InAs/GaAs pyramidal quantum dot, verify the feasibility and efficiency of the calculation method.

Keywords

EN

73.21.La; 73.63.Kv

Discipline

• 73.21.La: Quantum dots
• 73.63.Kv: Quantum dots

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 3
• Pages: 371-377

Dates

published

2016-03

received

2015-09-09

Contributors

author

Changgan Shu

• State Key Laboratory of IPOC, Beijing University of Posts and Telecommunications, Beijing 100876, China

author

Yumin Liu

• State Key Laboratory of IPOC, Beijing University of Posts and Telecommunications, Beijing 100876, China
• Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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Identifiers

DOI

10.12693/APhysPolA.129.371