EN
Fe_{1-x}Cr_xSnSbO₆ solid solution shows semiconducting behaviour with the activation energy decreasing from E_{A}=0.64 eV for x=0.0 to E_{A}=0.32 eV for x=1.0 in the intrinsic conductivity temperature region as well as the n-type conduction at room temperature. The I-V characteristics and the conductance G at 300 and 400 K showed symmetrical and nonlinear behavior in the voltage range (-100, 100 V) suggesting the electron emission over the potential barrier especially for the boundary compounds FeSnSbO₆ and CrSnSbO₆. These effects are discussed in the context of the energy gap E_{g}>1.6 eV many times greater than the thermal energy kT.