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Fe_{1-x}Cr_xSnSbO₆ solid solution shows semiconducting behaviour with the activation energy decreasing from E_{A}=0.64 eV for x=0.0 to E_{A}=0.32 eV for x=1.0 in the intrinsic conductivity temperature region as well as the n-type conduction at room temperature. The I-V characteristics and the conductance G at 300 and 400 K showed symmetrical and nonlinear behavior in the voltage range (-100, 100 V) suggesting the electron emission over the potential barrier especially for the boundary compounds FeSnSbO₆ and CrSnSbO₆. These effects are discussed in the context of the energy gap E_{g}>1.6 eV many times greater than the thermal energy kT.
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A-153-A-156
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2016-01
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- University of Silesia, Institute of Physics, Uniwersytecka 4, 40-007 Katowice, Poland
author
- West Pomeranian University of Technology in Szczecin, Department of Inorganic and Analytical Chemistry, al. Piastów 42, 71-065 Szczecin, Poland
author
- West Pomeranian University of Technology in Szczecin, Department of Inorganic and Analytical Chemistry, al. Piastów 42, 71-065 Szczecin, Poland
author
- University of Silesia, Institute of Physics, Uniwersytecka 4, 40-007 Katowice, Poland
author
- University of Silesia, Institute of Physics, Uniwersytecka 4, 40-007 Katowice, Poland
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv129n1a40kz