Structural and Optical Properties of Boron Nitride Grown by MOVPE

• Authors: A. Dąbrowska , K. Pakuła , R. Bożek , J. Rousset , D. Ziółkowska , K. Gołasa , K. Korona , A. Wysmołek , R. Stępniewski
• Languages of publication: EN

Abstracts

EN

Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.

Keywords

EN

81.15.Gh; 78.30.Fs; 78.20.-e

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-129-A-131

Dates

published

2016-01

Contributors

author

A. Dąbrowska

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

K. Pakuła

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

J. Rousset

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

D. Ziółkowska

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

K. Gołasa

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

K. Korona

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.129.A-129