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2016 | 129 | 1a | A-129-A-131
Article title

Structural and Optical Properties of Boron Nitride Grown by MOVPE

Content
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Languages of publication
EN
Abstracts
EN
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Keywords
EN
Year
Volume
129
Issue
1a
Pages
A-129-A-131
Physical description
Dates
published
2016-01
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv129n1a32kz
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