Electron-Deformational Phase Transitions in a TlGaSe₂ Layered Crystal

• Authors: L. Kharkhalis , K. Glukhov , M. Sznajder
• Languages of publication: EN

Abstracts

EN

We investigate the self-consistent localized electron states which are related to charge carrier inhomogeneities in a TlGaSe₂ crystal, in the framework of the continuum and the deformational potential approaches. For this purpose a nonstandard dispersion law for charge carriers following from the ab initio band structure calculation of the considered crystal is utilized. It is shown that a formation of stable localized electron states with different bond energy, which are separated by the potential barrier, takes place. These states can be responsible for the occurrence of the deformational phase transition in the presence of the non-equilibrium charge carriers in TlGaSe₂.

Keywords

EN

71.15.Mb; 71.20.Nr; 71.38.-k

Discipline

• 71.15.Mb: Density functional theory, local density approximation, gradient and other corrections
• 71.38.-k: Polarons and electron-phonon interactions(see also 63.20.K- Phonon interactions in lattice dynamics)
• 71.20.Nr: Semiconductor compounds

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-123-A-125

Dates

published

2016-01

Contributors

author

L. Kharkhalis

• Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St., 88000 Uzhgorod, Ukraine

author

K. Glukhov

• Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St., 88000 Uzhgorod, Ukraine

author

M. Sznajder

• Faculty of Mathematics and Natural Sciences, University of Rzeszów, S. Pigonia 1, 35-959 Rzeszów, Poland

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Identifiers

DOI

10.12693/APhysPolA.129.A-123