Construction of the Adiabatic Potential of a Symmetric Molecule in the Vicinity of Charged Semiconductor Surface

• Authors: S. Bercha , K. Glukhov , L. Kharkhalis , M. Sznajder
• Languages of publication: EN

Abstracts

EN

We present a description of the symmetry-based method for the construction of the adiabatic potential of a symmetric molecule near the charged semiconductor surface. For this purpose, a transformation of the adiabatic potential of a free high symmetric molecule (D_{3d}) in the presence of uniform electric field is investigated. The obtained adiabatic potential is analyzed with respect to the stability of molecule in the vicinity of charged surface, as a dependence of its orientation in the electric field.

Keywords

EN

71.20.-b; 71.70.Ej; 61.50.Ah; 02.20.-a

Discipline

• 71.20.-b: Electron density of states and band structure of crystalline solids
• 61.50.Ah: Theory of crystal structure, crystal symmetry; calculations and modeling
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
• 02.20.-a: Group theory(for algebraic methods in quantum mechanics, see 03.65.Fd; for symmetries in elementary particle physics, see 11.30.-j)

• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-120-A-122

Dates

published

2016-01

Contributors

author

S. Bercha

• Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St., 88000 Uzhgorod, Ukraine
• Charles University, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holesovickach 2, Prague, 18000, Czech Republic

author

K. Glukhov

• Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St., 88000 Uzhgorod, Ukraine

author

L. Kharkhalis

• Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St., 88000 Uzhgorod, Ukraine

author

M. Sznajder

• Faculty of Mathematics and Natural Sciences, University of Rzeszów, S. Pigonia 1, 35-959 Rzeszów, Poland

References

• [1] H.A. Jahn, E. Teller, Proc. R. Soc. A Math. Phys. Sci. 161(905), 220 (1937), doi: 10.1098/rspa.1937.0142
• [2] D.M. Bercha, S.A. Bercha, K.E. Glukhov, M. Sznajder, Acta Phys. Pol. A 126, 1143 (2014), doi: 10.12693/APhysPolA.126.1143
• [3] S.A. Bercha, V.M. Rizak, UzhNU Sci. Herald (Phys.) 33, 15 (2013)
• [4] S.A. Bercha, V.M. Rizak, Condens. Matter Phys. 17, 23701 (2014), doi: 10.5488/CMP.17.23701
• [5] G.L. Bir, G.E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors, Wiley, New York 1974
• [6] N. Tsud, S.A. Bercha, R.G. Acres, M. Vorokhta, I. Khalakhan, K.C. Prince, V. Matolin, Phys. Chem. Chem. Phys. 17, 2770 (2015), doi: 10.1039/C4CP03780D
• [7] N. Tsud, R.G. Acres, M. Iakhnenko, D. Mazur, K.C. Prince, V. Matolin, J. Phys. Chem. B 117, 918293 (2013), doi: 10.1021/jp404385h

Identifiers

DOI

10.12693/APhysPolA.129.A-120