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2016 | 129 | 1a | A-117-A-119
Article title

Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions

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EN
Abstracts
EN
We report on comparative studies of CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy either with or without predeposition of a sub-monolayer-thick CdTe layer (stressor). Also we consider the structure grown in a thermal activation mode. Emission properties of individual quantum dots are investigated by micro-photoluminescence spectroscopy using 500 nm apertures opened in a non-transparent gold mask. The density of emitting quantum dots and the spectral width of the single-dot emission lines are estimated.
Keywords
EN
Publisher

Year
Volume
129
Issue
1a
Pages
A-117-A-119
Physical description
Dates
published
2016-01
Contributors
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv129n1a28kz
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