Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions

• Authors: M. Rakhlin , S. Sorokin , I. Sedova , A. Usikova , S. Gronin , K. Belyaev , S. Ivanov , A. Toropov
• Languages of publication: EN

Abstracts

EN

We report on comparative studies of CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy either with or without predeposition of a sub-monolayer-thick CdTe layer (stressor). Also we consider the structure grown in a thermal activation mode. Emission properties of individual quantum dots are investigated by micro-photoluminescence spectroscopy using 500 nm apertures opened in a non-transparent gold mask. The density of emitting quantum dots and the spectral width of the single-dot emission lines are estimated.

Keywords

EN

68.65.Hb; 78.55.Et; 81.07.Ta

Discipline

• 68.65.Hb: Quantum dots (patterned in quantum wells)
• 78.55.Et: II-VI semiconductors
• 81.07.Ta: Quantum dots

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-117-A-119

Dates

published

2016-01

Contributors

author

M. Rakhlin

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Sorokin

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

I. Sedova

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

A. Usikova

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Gronin

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

K. Belyaev

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Ivanov

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

A. Toropov

• Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

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Identifiers

DOI

10.12693/APhysPolA.129.A-117