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2016 | 129 | 1a | A-100-A-102
Article title

Quasi Fermi Levels in Semiconductor Photovoltaic Heterojunction

Content
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EN
Abstracts
EN
The photovoltaic heterojunction elements are build of two different semiconductors of n and p type. Under cell illumination the same density of n and p carriers are created in each generation point but it leads to the remarkably higher increase of relative concentration for minority than for majority carriers. It is causing bigger energy change of the quasi Fermi level of minority than of majority carriers. The minority carriers decide of the value of generated photovoltage while the majority carriers contribution to it, in most cases can be neglected. Measured change of the generated open circuit photovoltage versus illumination light intensity allows to estimate corresponding to it increase of the minority carrier concentration. These allows as well to scan the part of the forbidden gap region by the minority carriers quasi Fermi level and in a case of impurity or defect levels located in forbidden gap it can influence on the continuous dependence of generated photovoltage versus light intensity e.g. for pinning of the Fermi level. To create efficient photovoltaic heterojunction it will need to study electronic properties of the used impurities and their proper distribution in the region of junction.
Keywords
EN
Publisher

Year
Volume
129
Issue
1a
Pages
A-100-A-102
Physical description
Dates
published
2016-01
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/48, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/48, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/48, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/48, 02-668 Warsaw, Poland
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv129n1a23kz
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