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2016 | 129 | 1a | A-70-A-72
Article title

Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

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EN
Abstracts
EN
Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter's position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.
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Contributors
author
  • Central European Institute of Technology, Brno University of Technology,, Technická 10, CZ 616 00 Brno, Czech Republic
  • Institute of Physics, Brno University of Technology, Technická 2, CZ 616 69 Brno, Czech Republic
author
  • Central European Institute of Technology, Brno University of Technology,, Technická 10, CZ 616 00 Brno, Czech Republic
author
  • Institute of Physics, Brno University of Technology, Technická 2, CZ 616 69 Brno, Czech Republic
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv129n1a14kz
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