Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

• Authors: Z. Édes , V. Křápek , T. Šikola
• Languages of publication: EN

Abstracts

EN

Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter's position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.

Keywords

EN

73.20.Mf; 78.55.Qr; 42.50.Nn; 78.20.Bh

Discipline

• 78.55.Qr: Amorphous materials; glasses and other disordered solids
• 42.50.Nn: Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
• 73.20.Mf: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)(for collective excitations in quantum Hall effects, see 73.43.Lp)
• 78.20.Bh: Theory, models, and numerical simulation

• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-70-A-72

Dates

published

2016-01

Contributors

author

Z. Édes

• Central European Institute of Technology, Brno University of Technology,, Technická 10, CZ 616 00 Brno, Czech Republic
• Institute of Physics, Brno University of Technology, Technická 2, CZ 616 69 Brno, Czech Republic

author

V. Křápek

• Central European Institute of Technology, Brno University of Technology,, Technická 10, CZ 616 00 Brno, Czech Republic

author

T. Šikola

• Institute of Physics, Brno University of Technology, Technická 2, CZ 616 69 Brno, Czech Republic

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Identifiers

DOI

10.12693/APhysPolA.129.A-70