Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

• Authors: V. Křápek , P. Klenovský , T. Šikola
• Languages of publication: EN

Abstracts

EN

We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs_{1-y}Sb_y capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a two-segment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at narticular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.

Keywords

EN

71.35.-y; 73.21.La; 81.05.Ea

Discipline

• 73.21.La: Quantum dots
• 71.35.-y: Excitons and related phenomena
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-66-A-69

Dates

published

2016-01

Contributors

author

V. Křápek

• Central European Institute of Technology, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic

author

P. Klenovský

• Central European Institute of Technology, Masaryk University, Kamenice 753, 625 00 Brno, Czech Republic

author

T. Šikola

• Central European Institute of Technology, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic
• Institute of Physical Engineering, Brno University of Technology, Technická 22, 616 69 Brno, Czech Republic

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Identifiers

DOI

10.12693/APhysPolA.129.A-66