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2016 | 129 | 1a | A-66-A-69
Article title

Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

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We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs_{1-y}Sb_y capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a two-segment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at narticular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.

Physical description
  • Central European Institute of Technology, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic
  • Central European Institute of Technology, Masaryk University, Kamenice 753, 625 00 Brno, Czech Republic
  • Central European Institute of Technology, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic
  • Institute of Physical Engineering, Brno University of Technology, Technická 22, 616 69 Brno, Czech Republic
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