Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

• Authors: P. Klenovský , V. Křápek , J. Humlíček
• Languages of publication: EN

Abstracts

EN

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 μeV/325 μeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.

Keywords

EN

73.21.La; 75.75.-c; 85.35.Be; 68.65.Hb

Discipline

• 68.65.Hb: Quantum dots (patterned in quantum wells)
• 75.75.-c: Magnetic properties of nanostructures
• 85.35.Be: Quantum well devices (quantum dots, quantum wires, etc.)
• 73.21.La: Quantum dots

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-62-A-65

Dates

published

2016-01

Contributors

author

P. Klenovský

• Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno, Czech Republic

author

V. Křápek

• Central European Institute of Technology, Brno University of Technology, Technická 10, 61600 Brno, Czech Republic

author

J. Humlíček

• Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno, Czech Republic

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Identifiers

DOI

10.12693/APhysPolA.129.A-62