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Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
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Year
Volume
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A-36-A-40
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published
2016-01
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author
- Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine
author
- Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine
author
- Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine
author
- Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine
author
- Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine
author
- Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine
author
- Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, NASU, prosp. Nauky 46, Kyiv, Ukraine
author
- Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine
author
- Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine
author
- Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine
author
- Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine
References
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bwmeta1.element.bwnjournal-article-appv129n1a05kz