Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

• Authors: V. Romanyuk , N. Dmitruk , V. Karpyna , G. Lashkarev , V. Popovych , M. Dranchuk , R. Pietruszka , M. Godlewski , G. Dovbeshko , I. Timofeeva , O. Kondratenko , M. Taborska , A. Ievtushenko
• Languages of publication: EN

Abstracts

EN

Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).

Keywords

EN

78.66.Hf; 73.61.Ga

Discipline

• 78.66.Hf: II-VI semiconductors
• 73.61.Ga: II-VI semiconductors

• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-36-A-40

Dates

published

2016-01

Contributors

author

V. Romanyuk

• Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine

author

N. Dmitruk

• Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine

author

V. Karpyna

• Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine

author

G. Lashkarev

• Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine

author

V. Popovych

• Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine

author

M. Dranchuk

• Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine

author

R. Pietruszka

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

G. Dovbeshko

• Institute of Physics, NASU, prosp. Nauky 46, Kyiv, Ukraine

author

I. Timofeeva

• Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine

author

O. Kondratenko

• Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine

author

M. Taborska

• Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine

author

A. Ievtushenko

• Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.129.A-36