Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

• Authors: V. Romanyuk , N. Dmitruk , V. Karpyna , G. Lashkarev , V. Popovych , M. Dranchuk , R. Pietruszka , M. Godlewski , G. Dovbeshko , I. Timofeeva , O. Kondratenko , M. Taborska , A. Ievtushenko
• Languages of publication: EN

Abstracts

EN

Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).

Keywords

EN

78.66.Hf   73.61.Ga  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 129
• Issue: 1a
• Pages: A-36-A-40

Dates

published

2016-01

References

• [1] T. Minami, Thin Solid Films 516, 5822 (2008), doi: 10.1016/j.tsf.2007.10.063
• [2] K. Elmer, T. Welzel, J. Mater. Res. 27, 765 (2012), doi: 10.1557/jmr.2011.428
• [3] H. Yoshikawa, S. Adachi, Jpn. J. Appl. Phys. 36, 6237 (1997), doi: 10.1143/JJAP.36.6237
• [4] P.L. Washington, H.C. Ong, J.Y. Dai, R.P.H. Chang, Appl. Phys. Lett. 72, 3261 (1998), doi: 10.1063/1.121617
• [5] A. Abdolahzadeh Ziabari, S.M. Rozati, Physica B 407, 4512 (2012), doi: 10.1016/j.physb.2012.08.024
• [6] K. Ellmer, J. Phys. D Appl. Phys. 34, 3097 (2001), doi: 10.1088/0022-3727/34/21/301
• [7] F. Ruske, A. Pflug, V. Sittinger, B. Szyszka, D. Greiner, B. Rech, Thin Solid Films 518, 1289 (2009), doi: 10.1016/j.tsf.2009.03.218
• [8] J. Tang, L.Y. Deng, C.B. Tay, X.H. Zhang, J.W. Chai, H. Qin, H.W. Liu, T. Venkatesan, S.J. Chua, J. Appl. Phys. 115, 033111 (2014), doi: 10.1063/1.4861421
• [9] T. Yamada, H. Makino, N. Yamamoto, T. Yamamoto, J. Appl. Phys. 107, 123534 (2010), doi: 10.1063/1.3447981
• [10] Y. Kajikawa, J. Cryst. Growth 289, 387 (2006), doi: 10.1016/j.jcrysgro.2005.11.089
• [11] A. Wojcik, M. Godlewski, E. Guziewicz, R. Minikayev, W. Paszkowicz, J. Cryst. Growth 310, 284 (2008), doi: 10.1016/j.jcrysgro.2007.10.010
• [12] J.T. Thienprasert, S. Rujiravat, W. Klysubun, J.N. Duenow, T.J. Coutts, S.B. Zhang, D.C. Look, S. Limpijumnong, Phys. Rev. Lett. 110, 055502 (2013), doi: 10.1103/PhysRevLett.110.055502
• [13] K. Ellmer, A. Klein, B. Rech, Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells, Vol. 104, Springer Science and Business Media, Berlin Heidelberg 2007, p. 60, doi: 10.1007/978-3-540-73612-7

Identifiers

DOI

10.12693/APhysPolA.129.A-36