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2016 | 129 | 1a | A-33-A-35
Article title

Optimization of InGaN Laser Diodes Based on Numerical Simulations

Content
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Languages of publication
EN
Abstracts
EN
Simulations of blue and green laser diodes with InGaN quantum wells are presented. In this study, a particular emphasis on efficiency and optical power of the structures was placed. Effect of the aluminum content in an electron blocking layer on the electron overflow and efficiency is discussed. Substantial decrease of efficiency of laser diodes is reported for low aluminum levels. It is also shown that polarization charges existing in AlInGaN heterostructures grown on GaN polar direction and low ionization degree of magnesium acceptors lead to high resistance of these devices. These effects hinder the carriers from reaching an active region and consequently they impose high operating voltages.
Keywords
EN
Year
Volume
129
Issue
1a
Pages
A-33-A-35
Physical description
Dates
published
2016-01
References
  • [1] P.A. Markowich, C.A. Ringhofer, C. Schmeiser, Semiconductor Equations, Springer-Verlag, Wien 1990
  • [2] S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, Wien 1984
  • [3] M. Kuramoto, C. Sasaoka, N. Futagawa, M. Nido, A.A. Yamaguchi, Phys. Status Solidi A 192, 329 (2002)
  • [4] K. Sakowski, L. Marcinkowski, S. Krukowski, Lecture Notes in Computer Science 8385, 551 (2014), doi: 10.1007/978-3-642-55195-6_52
  • [5] K. Sakowski, L. Marcinkowski, S. Krukowski, S. Grzanka, E. Litwin-Staszewska, J. Appl. Phys. 111, 123115 (2012), doi: 10.1063/1.4730772
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv129n1a04kz
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