Surface Composition of CIS Compound Affected by Xe⁺ Irradiation

• Authors: I. Tashlykov , P. Zukowski , D. Silvanovich , V. Gremenok
• Languages of publication: EN

Abstracts

EN

The paper presents the results of investigation of element composition of CuInSe₂ (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.

Keywords

EN

68.37.Ps; 06.30.Bp

Discipline

• 06.30.Bp: Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
• 68.37.Ps: Atomic force microscopy (AFM)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 5
• Pages: 927-930

Dates

published

2015-11

Contributors

author

I. Tashlykov

• Belarusian State Pedagogical University, 18 Sovetskaja Str., 220050 Minsk, Belarus

author

P. Zukowski

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

author

D. Silvanovich

• Belarusian State Pedagogical University, 18 Sovetskaja Str., 220050 Minsk, Belarus

author

V. Gremenok

• S-PM Research Centre, NAS of Belarus, 19 P. Brovka Str., 220072 Minsk, Belarus

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Identifiers

DOI

10.12693/APhysPolA.128.927