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2015 | 128 | 5 | 927-930
Article title

Surface Composition of CIS Compound Affected by Xe⁺ Irradiation

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EN
Abstracts
EN
The paper presents the results of investigation of element composition of CuInSe₂ (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.
Keywords
EN
Year
Volume
128
Issue
5
Pages
927-930
Physical description
Dates
published
2015-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n530kz
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