Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

• Authors: N. Poklonski , N. Gorbachuk , Vo Nha , S. Shpakovski , V. Filipenya , V. Skuratov , T. Kołtunowicz , N. Kukharchyk , H. Becker , A. Wieck
• Languages of publication: EN

Abstracts

EN

Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.

Keywords

EN

72.20.Jv; 61.80.Fe

Discipline

• 61.80.Fe: Electron and positron radiation effects
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 5
• Pages: 891-893

Dates

published

2015-11

Contributors

author

N. Poklonski

• Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus

author

N. Gorbachuk

• Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus

author

Vo Nha

• Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus

author

S. Shpakovski

• JSC "INTEGRAL", 121A Kazintsa Str., BY-220108, Minsk, Belarus

author

V. Filipenya

• JSC "INTEGRAL", 121A Kazintsa Str., BY-220108, Minsk, Belarus

author

V. Skuratov

• Joint Institute for Nuclear Research, 6 Joliot-Curie Str., RU-141980 Dubna, Russia

author

T. Kołtunowicz

• Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

author

N. Kukharchyk

• Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany

author

H. Becker

• Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany

author

A. Wieck

• Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany

References

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Identifiers

DOI

10.12693/APhysPolA.128.891